DSS4140V-7

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	1A
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	440mV @ 200mA, 2A
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	300 @ 500mA, 5V
Power - Max:	600mW
Frequency - Transition:	150MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-563, SOT-666
Supplier Device Package:	SOT-563
Base Part Number:	DSS4140

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DSS4140V-7 Application Field and Working Principle

DSS4140V-7 is a single bipolar junction transistor (BJT), which has high power and high current capabilities. It is most commonly used for audio, RF and power switching applications. This transistor is able to achieve high level of performance and reliability, making it suitable for use in commercial and industrial applications.The DSS4140V-7 is a NPN device, and is made from silicon. The transistor consists of three pins, namely the collector (C), the base (B) and the emitter (E). The collector is the most negative end and the emitter is the most positive end of the transistor. The base is used to control the flow of current through the transistor, by controlling the amount of charge stored on a small semiconductor section inside theDevice.The working principle of the DSS4140V-7 involves the principle of minority charge carriers. The base region in the transistor has lower doping concentrations than the emitter and collector. This means that the majority charge carriers of the device, the electrons, move along the base region, since there is a less number of donor atoms in the region. This leads to the build up of a barrier potential, which prevents electron current from flowing from the base section to the collector section of the transistor.The base-emitter junction of theDSS4140V-7 is also responsible for controlling the current flow through the transistor. This junction is actually a reverse-biased junction. It has a very low voltage applied across it, thus allowing a selectable but very small amount of current to flow. This enables controlling the amount of current in the transistor.The DSS4140V-7 is an ideal transistor for applications such as audio, radio frequency (RF), and power switching applications. It has a wide operating range and allows for high frequencies, making it suitable for switching and in applications. Additionally, it provides excellent thermal stability, allowing it to handle higher wattages and temperatures compared to other transistors.The DSS4140V-7 can also be used in circuits that require high power levels and high current capacity. It has high collector current and high power dissipation ratings, making it suitable for use in circuits that require enhanced power handling capabilities. Furthermore, its high collector-emitter voltage and leakage current ratings allow it to be used in systems requiring increased voltage and current levels.In conclusion, the DSS4140V-7 is a single bipolar junction transistor with high power and current capabilities. It is suitable for a range of applications such as audio, RF and power switching. It provides excellent thermal stability and wide operating ranges, allowing it to handle high frequencies and temperatures. Its high collector current and power dissipation ratings make it suitable for high power levels and high current capacity circuits.

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