DTB713ZMT2L Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The DTB713ZMT2L is a single pre-biased transistor featuring an NPN structure and low VCEO value for high speed switching applications. Its small package makes it suitable for applications where space is limited. It has a higher current gain than most other single transistors, making it great for dissipating heat and extending the life of the device. With excellent noise characteristics, it can be used for signal emission, pulse generation and for switching functions.

The DTB713ZMT2L is a high power NPN transistor, with a current gain of 50. It has an operating voltage range of 10 to 40 volts, which makes it suitable for most applications. Its collector-emitter voltage (VCEO) is 30 volts, which is low compared to other transistors and enables faster switching. The DC current holding ability of the device is up to 0.3mA, and the current gain (HFE) is approximately 120. This allows efficient operation at low power levels.

The DTB713ZMT2L can be used in the switching of inductive loads and the powering up of high-current loads. It is also suitable for applications such as audio amplifiers and signal-control circuits. Due to its high current gain, it can be used as a current limiter in circuits. It can also be used in motor control, pulse generation and signal emission.

The DTB713ZMT2L is a versatile transistor for use in many different applications. Its high current gain and low voltage drop contribute to its good performance. It can be used in a wide range of applications as a switch, current limiter, signal emitter and more. Its small package makes it suitable for space-constrained installations, while its excellent noise characteristics make it suitable for pulse generation, signal emission and other applications.

The specific data is subject to PDF, and the above content is for reference