DTB743EMT2L Allicdata Electronics
Allicdata Part #:

DTB743EMT2L-ND

Manufacturer Part#:

DTB743EMT2L

Price: $ 0.07
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS PNP 150MW VMT3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DTB743EMT2L datasheetDTB743EMT2L Datasheet/PDF
Quantity: 1000
8000 +: $ 0.06050
Stock 1000Can Ship Immediately
$ 0.07
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V
Base Part Number: DTB743
Supplier Device Package: VMT3
Package / Case: SOT-723
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 260MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Series: --
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 30V
Current - Collector (Ic) (Max): 200mA
Transistor Type: PNP - Pre-Biased
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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A DTB743EMT2L is a single bipolar transistor that can be considered pre-biased. This type of transistor is commonly used in applications such as low-power temperature control, frequency control, and small-signal amplification.

The transistor has three terminals that are designated as Emitter, Base, and Collector. These terminals are responsible for the transistor\'s functioning. A positive voltage is applied to the base for a certain period of time, resulting in a negative voltage on the collector. Next, the collector voltage can be applied to the base of the next transistor, resulting in an additional gain in a circuit.

The DTB743EMT2L has a breakdown voltage of 7V, which makes it suitable for applications with extremely low power. It is equipped with a collector-base junction that allows the transistor to start functioning as soon as a voltage is applied. This is known as pre-biasing and it can prove to be beneficial in many low-power applications that require fast response times or high levels of efficiency.

DTB743EMT2L transistors can be used in a variety of different applications, including signal conditioning, amplification, switching, and modulation. In signal conditioning, the transistor can be used to control signal levels in circuits with varying impedances. In amplification, it can amplify small signals as well as provide a voltage gain. In switching, DTB743EMT2L transistors can be used for switching purposes along with providing isolation and improving circuit performance.

Also, the transistors can be used in modulation applications as well. The collector-base junction helps in controlling the frequency of the signal, allowing it to be modulated and changed according to the requirements. This versatile capability of the DTB743EMT2L makes it an ideal choice for applications that require a fast response and high efficiency.

The DTB743EMT2L is also designed with a high switching speed. This helps the transistor to switch quickly between different states, allowing it to handle a variety of signals with ease. Moreover, the transistor can handle a high voltage and current, making it ideal for a variety of applications.

In addition to being used in many applications, the DTB743EMT2L is also ideal for various projects. Its wide range of functionalities and capabilities make it an excellent choice for a variety of projects. The transistor can be used in projects related to signal conditioning, signal amplification, switching, and modulation.

Overall, the DTB743EMT2L is an excellent choice for a variety of applications and projects. Its versatility, pre-biasing capability, fast switching speed, and ability to handle high voltages and currents make it an ideal candidate for low-power applications.

The specific data is subject to PDF, and the above content is for reference

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