DTB723YMT2L Allicdata Electronics
Allicdata Part #:

DTB723YMT2L-ND

Manufacturer Part#:

DTB723YMT2L

Price: $ 0.07
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS PNP 150MW VMT3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DTB723YMT2L datasheetDTB723YMT2L Datasheet/PDF
Quantity: 1000
8000 +: $ 0.06050
Stock 1000Can Ship Immediately
$ 0.07
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 30V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 260MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VMT3
Description

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The DTB723YMT2L is a high‑performance transistor of the single, pre‑biased BIJT (Bipolar Junction Transistor) type. This type of transistor is designed for use in consumer and automotive electronics, primarily for providing efficient amplification and switching designed for high‑voltage, high‑power applications. As such, it is highly suitable for use in DC/DC converters, AC/DC converters, CCFL inverters, motor control, power regulation and general‑purpose switching applications.

The DTB723YMT2L has two different modes of operation, which are dependent upon its DC biasing. When it is pre‑biased to a positive voltage from the gate‑collector, it is in deep cut‑off mode, with nearly no current flowing through the collector. In this state, the transistor acts as a high‑impedance switch, allowing nearly no current flow through the transistor. This state is also referred to as the slow‑turn‑on state. In contrast, when pre‑biased to a negative voltage from the gate‑collector, the transistor is in active mode and draws significant current through the collector. This active mode is referred to as the fast turn‑on state.

The turn-on speed of the DTB723YMT2L is affected by the value of the gate bias voltage. The faster the turn‑on speed, the lower the voltage required to turn the transistor on. This is advantageous in applications which require fast switching, such as motor control. Furthermore, the DTB723YMT2L also offers a low saturation voltage drop and is designed to have good ruggedness characteristics, allowing it to operate in high temperature, high frequency, and high voltage applications.

The DTB723YMT2L is well suited for a wide range of applications which rely on efficient and reliable switching, amplifications, and/or power control. As such, the DTB723YMT2L can typically be found in applications such as DC/DC converters, AC/DC converters, CCFL inverters, motor control, high‑efficiency power regulation, communications systems, high‑voltage safety circuits, and many more.

The DTB723YMT2L utilizes a standard BJT architecture, but also has its own specific characteristics which increase its overall performance. For example, its high rate of switching translates into lower on-state resistance losses which allow for more efficient power dissipation and higher switching speeds. Furthermore, its low noise characteristics allow it to be used in noise suppression circuits, while its high voltage capabilities make it suitable for use in voltage regulators and power supply circuits.

In conclusion, the DTB723YMT2L is a high‑performance, single, pre‑biased BJT that is suitable for a wide range of switching, amplification, and power control applications, and which features several unique characteristics which make it well suited for high temperature, high frequency, and high voltage environments. As such, it is an ideal solution for applications where high efficiency, noise suppression, and high switching speeds are needed.

The specific data is subject to PDF, and the above content is for reference

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