DTB743EETL Allicdata Electronics
Allicdata Part #:

DTB743EETLTR-ND

Manufacturer Part#:

DTB743EETL

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS PNP 150MW EMT3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DTB743EETL datasheetDTB743EETL Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.05584
6000 +: $ 0.05274
15000 +: $ 0.04809
30000 +: $ 0.04499
75000 +: $ 0.04137
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Resistor - Emitter Base (R2): 4.7 kOhms
Base Part Number: DTB743
Supplier Device Package: EMT3
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 260MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V
Series: --
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 30V
Current - Collector (Ic) (Max): 200mA
Transistor Type: PNP - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Not For New Designs
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The DTB743EETL transistor is a single, pre-biased bi-polar junction transistor that is widely used in a variety of applications. Primarily, the transistor is used for switching and amplification, as it is an ideal choice for Power supply circuits, audio amplifiers, and other power amplifiers. It is also well-suited for numerous logic circuits and other low-power applications.

The DTB743EETL transistor has a minimum DC current gain of 65 and a maximum of 130. It also features an ultra-low saturation voltage (VCEsat) of 0.2 volts at collector-emitter saturation. The current gain rarely varies more than 1 to 5 percent per unit, making it an extremely reliable choice for the above applications. Moreover, the constant-current characteristics of the DTB743EETL provides reliability in such applications as pulse amplifiers, oscillator, and fast ramp-wave detectors.

The transistor also exhibits a minimized collector-to-base, collector-to-emitter, and emitter-to-base reverse current characteristics. These characteristics are especially useful for applications, such as small-signal amplifiers and level detectors where current leakage is a concern. The transistor also has a very low drain-gate capacitance, which eliminates the need for bias resistor adjustments.

The DTB743EETL transistor is ofteb pre-biased, meaning that a PNP typically works in the switching mode and a NPN typically works in the amplification mode. This kind of biasing also allows for faster response from the device, as well as greater stability. The pre-biasing also improves the device\'s ability to react quickly to both rising and falling input signals.

The overall working principle of the DTB743EETL transistor is based on its bi-polar junction. A junction is created between a base and two doped regions, forming two P-N junctions. When a voltage is applied to the transistor’s base, electrons from the N-type region move over to the P-type region, creating a flow of current through the device. This allows the device to act as an amplifier or switch by controlling the current flow. Additionally, since this type of transistor is pre-biased, the user can easily apply an amount of bias voltage to achieve the desired gain.

The DTB743EETL transistor is ideal for many different applications. Its high current gain and low saturation voltage make it an ideal choice for power amplifiers and audio amplifiers. Moreover, its constant current characteristics improve its suitability for pulse amplifiers and oscillators. The pre-biased design also helps to improve device responsiveness and stability and eliminates the need for bias resistor adjustments. All in all, the DTB743EETL transistor is a versatile and reliable device for many different applications.

The specific data is subject to PDF, and the above content is for reference

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