DTD713ZMT2L Allicdata Electronics
Allicdata Part #:

DTD713ZMT2LTR-ND

Manufacturer Part#:

DTD713ZMT2L

Price: $ 0.07
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS NPN 150MW VMT3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DTD713ZMT2L datasheetDTD713ZMT2L Datasheet/PDF
Quantity: 1000
8000 +: $ 0.06073
16000 +: $ 0.05537
24000 +: $ 0.05180
56000 +: $ 0.04763
Stock 1000Can Ship Immediately
$ 0.07
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Base Part Number: DTD713
Supplier Device Package: VMT3
Package / Case: SOT-723
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 260MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Series: --
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Voltage - Collector Emitter Breakdown (Max): 30V
Current - Collector (Ic) (Max): 200mA
Transistor Type: NPN - Pre-Biased
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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In the modern world, transistors are essential components in a variety of electronics, from computers and mobile phones to automotive and home appliances. The DTD713ZMT2L transistor is a single, pre-biased, low power discrete BJT (bipolar junction transistor) used extensively in electronic circuits. This article will discuss the application field and working principle of the DTD713ZMT2L transistor.

Since transistors are all about controlling and amplifying electrical signals, the key advantage of the DTD713ZMT2L is its incredibly low power usage. This allows it to be used in both automotive and high-end audio/visual applications without overtaxing the current system. The DTD713ZMT2L is also robust, providing strong protection against extreme temperatures and is especially suited for use in power monitoring and protection circuits. Furthermore, the DTD713ZMT2L is designed for low harmonic distortion, giving it wide-ranging applications in the audio circuits of amplifiers, radios and other audio equipment.

The DTD713ZMT2L consists of two transistors packaged in a small 8-pin dual in-line package (DIP), with each transistor having its own base and collector. Each transistor has a bias voltage applied to it, allowing them to effectively amplify signals without relying on external circuitry. The common emitter of both transistors is used as the output and is connected to the load, allowing the voltage signals to be output to the appropriate load and allowing the load to be effectively controlled.

The working principle of this transistor is quite straightforward. When a voltage signal is applied to the base of the transistor, it creates an electrical field within the N-type and P-type semiconductor material which makes up the transistor. This causes current to flow across the emitter, allowing it to be amplified by the transistor. The amplified current is then output through the collector to the load, allowing the signal to be controlled and amplified. This is the basis for how most transistors work, however the DTD713ZMT2L has the added bonus of pre-biased transistors, resulting in a faster response, low power usage and drastically improved protection against extreme temperatures.

In conclusion, the DTD713ZMT2L is a single, pre-biased, low-power BJT designed for use in automotive and home appliances. It has the advantage of being robust and capable of handling extreme temperatures, providing protection in power monitoring and protection circuits. It also has low harmonic distortion, allowing wide-ranging applications in the audio circuits of amplifiers, radios and other audio equipment. The working principle of the DTD713ZMT2L is quite straightforward, relying on the electrical field created by the VBE (voltage base-emitter) to amplify the incoming current. This makes it an ideal choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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