DTD743EETL Allicdata Electronics
Allicdata Part #:

DTD743EETLTR-ND

Manufacturer Part#:

DTD743EETL

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS NPN 150MW EMT3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DTD743EETL datasheetDTD743EETL Datasheet/PDF
Quantity: 1000
1 +: $ 0.06000
10 +: $ 0.05820
100 +: $ 0.05700
1000 +: $ 0.05580
10000 +: $ 0.05400
Stock 1000Can Ship Immediately
$ 0.06
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V
Base Part Number: DTD743
Supplier Device Package: EMT3
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 260MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Series: --
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 30V
Current - Collector (Ic) (Max): 200mA
Transistor Type: NPN - Pre-Biased
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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The DTD743EETL is part of a family of pre-biased Single Bipolar Junction Transistors (BJT) that offer excellent performance and flexibility for a wide range of application fields and working principles. Pre-biased BJTs offer the advantage of being able to apply a balanced bias to the transistor to reduce or eliminate noise caused by output voltage variations. This allows for a smoother, more accurate control of voltage and current in the transistor.

The DTD743EETL is designed for the bipolar single transistor (BJT) type of applications, and it is suitable for analog low noise amplifiers, voltage converters, relay and motor control, common emitter and emitter follower circuits, and switch mode power supplies. It is also frequently used in industrial and automotive applications. Its features include a low collector-emitter saturation voltage, an extremely fast switching speed, and a wide range of operating currents.

It can also be used in circuits with a wide range of gains, from 10 to 1000. The transistor is also designed to handle current levels up to 200mA, making it ideal for a wide range of applications. In addition, the DTD743EETL is rated for use at temperatures up to 175°C, making it appropriate for use in high temperature environments.

The working principle of the DTD743EETL is based on controlling the base current of the transistor, allowing the collector current to be controlled. When a small base current is applied, the voltage to be amplified is applied to the base, and the collector current is controlled by the size of the base current. When the base current is increased, the collector current increases, allowing the voltage to be amplified.

The DTD743EETL includes a number of features to improve performance. The transistor is manufactured using advanced semiconductor technologies for improved reliability and electrical performance. It also has built-in ESD protection to prevent damage from electrostatic discharge. Furthermore, the DTD743EETL has low leakage current, ensuring accuracy and low noise operation.

In conclusion, the DTD743EETL provides an excellent, reliable, and efficient transistor for a variety of application fields and working principles, offering superior performance and reliability. This pre-biased Single Bipolar Junction Transistor offers an excellent combination of features and makes it ideal for industrial and automotive applications that require high performance and low cost. The DTD743EETL is an ideal choice for applications that require fast switching speeds and high currents, as well as in analog applications such as amplifiers, converters, and motor controls.

The specific data is subject to PDF, and the above content is for reference

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