DTD743ZMT2L Allicdata Electronics
Allicdata Part #:

DTD743ZMT2L-ND

Manufacturer Part#:

DTD743ZMT2L

Price: $ 0.07
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS NPN 150MW VMT3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DTD743ZMT2L datasheetDTD743ZMT2L Datasheet/PDF
Quantity: 1000
8000 +: $ 0.06050
Stock 1000Can Ship Immediately
$ 0.07
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Base Part Number: DTD743
Supplier Device Package: VMT3
Package / Case: SOT-723
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 260MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 30V
Current - Collector (Ic) (Max): 200mA
Transistor Type: NPN - Pre-Biased
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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The DTD743ZMT2L is a type of transistor, specifically categorized as a single, pre-biased bipolar junction transistor (BJT). It is particular in that it offers a pre-biased operation meaning that it has a fixed bias circuit which ensures the transistor will still operate correctly at various currents from the battery supply. As such, this makes it an ideal choice for applications which require consistent performance even when the current from the battery supply may be varying in intensity.

The DTD743ZMT2L is comprised of two NPN transistors, Q1 and Q2, which, when combined, form a reliable, pre-biased BJT. Q1 acts as the main transistor, while Q2 acts as a reference transistor. The device is pre-biased with resistors R1 and R2, which can be adjusted according to specific requirements. In addition, the device also has a voltage divider in order that the base emitter of the main transistor Q1 is biased accordingly.

The operating principle of the DTD743ZMT2L follows that of an NPN switching transistor. When a voltage is applied to its base, a current will pass through the base and create an electric field across the junction of the emitter and collector. This electric field will create a majority current flow, which will turn the collector-emitter path of the main transistor, Q1, into a low resistance path.

The DTD743ZMT2L has a wide range of applications in which it can be used, including medical electronics, automotive electronics, industrial systems, and consumer electronics. It has been found to be particularly effective and reliable in medical applications due to its pre-biased operation which ensures consistent and reliable performance. In automotive electronics, it is widely used as an audio amplifier, where its pre-biasing feature is beneficial in keeping the amplifier stable and allowing it to operate over a range of battery levels without alteration. In industrial systems, it can provide low power control when used in combination with a complementary PNP device, allowing for increased power efficiency and a higher level of operational safety. Finally, the DTD743ZMT2L is widely used in consumer electronic applications such as radio receivers, audio equipment, and digital circuitry, largely due to its pre-biased operation and low power consumption.

In conclusion, the DTD743ZMT2L is a single, pre-biased bipolar junction transistor (BJT) offering reliable, pre-biased operation over a range of battery levels, making it a suitable choice for a variety of applications. It has been found to be particularly effective in medical, automotive, industrial, and consumer electronic applications, due to its pre-biased, low-power consumption operation.

The specific data is subject to PDF, and the above content is for reference

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