
Allicdata Part #: | DTD743XMT2L-ND |
Manufacturer Part#: |
DTD743XMT2L |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS NPN 150MW VMT3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | ![]() |
Quantity: | 1000 |
8000 +: | $ 0.06050 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 140 @ 100mA, 2V |
Base Part Number: | DTD743 |
Supplier Device Package: | VMT3 |
Package / Case: | SOT-723 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 260MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 2.5mA, 50mA |
Series: | -- |
Resistor - Emitter Base (R2): | 10 kOhms |
Resistor - Base (R1): | 4.7 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Current - Collector (Ic) (Max): | 200mA |
Transistor Type: | NPN - Pre-Biased |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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DTD743XMT2L Application Field and Working Principle
Introduction
The DTD743XMT2L is a pre-biased, monolithic and highly integrated NPN-PNP Bipolar Transistor family. It contains two gain stages: an NPN and a PNP. This integration makes it suitable for applications in low-power consumption, low-voltage and low-cost designs. In the following section, we will discuss the application field of this device and explain the working principle.
Application Field
The DTD743XMT2L can be used in a wide range of applications due to its highly integrated nature and ease of use. Some of these include:
- Low-power, low-voltage design
- Small-signal and AC amplification
- Switch circuits, timer circuits, and driver circuits
- High-frequency and digital applications
- Waveform shaping
- Converter circuits
Working Principle
The DTD743XMT2L operates based on the fact that when a current is applied to the base of one transistor, it will turn on and pass a larger current through its collector-emitter junction. This collector-emitter junction can then be connected to the base of the other transistor, turning it on and passing a larger current through its collector-emitter junction. This is known as the "common-base current gain" of the DTD743XMT2L.
As the current passes through the collector-emitter junction of one transistor, it also passes through a capacitor, creating a delay in the current flow. This delay allows the current to build up in the other transistor\'s collector-emitter junction, causing it to turn on as well. This is known as the "common-emitter current gain" of the DTD743XMT2L.
The current gain of the DTD743XMT2L is typically very low, but its low-power, low-capacity and low-voltage design make it suitable for designs that require minimal power consumption and space. Furthermore, the integrated nature of the DTD743XMT2L makes it suitable for use in small-signal amplification and AC applications.
Conclusion
The DTD743XMT2L is a highly integrated, low-power and low-voltage pre-biased NPN-PNP Bipolar Transistor family. Its highly integrated nature and ease of use make it suitable for a wide range of applications including low-power, low-voltage design, small-signal and AC amplifications, switch circuits, digital applications, waveform shaping and converter circuits. The working principle of the device is based on the "common-base current gain" and the "common-emitter current gain" of the two transistors contained in the device.
The specific data is subject to PDF, and the above content is for reference
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