DTD743XMT2L Allicdata Electronics
Allicdata Part #:

DTD743XMT2L-ND

Manufacturer Part#:

DTD743XMT2L

Price: $ 0.07
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS NPN 150MW VMT3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DTD743XMT2L datasheetDTD743XMT2L Datasheet/PDF
Quantity: 1000
8000 +: $ 0.06050
Stock 1000Can Ship Immediately
$ 0.07
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Base Part Number: DTD743
Supplier Device Package: VMT3
Package / Case: SOT-723
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 260MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Series: --
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 30V
Current - Collector (Ic) (Max): 200mA
Transistor Type: NPN - Pre-Biased
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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DTD743XMT2L Application Field and Working Principle

Introduction

The DTD743XMT2L is a pre-biased, monolithic and highly integrated NPN-PNP Bipolar Transistor family. It contains two gain stages: an NPN and a PNP. This integration makes it suitable for applications in low-power consumption, low-voltage and low-cost designs. In the following section, we will discuss the application field of this device and explain the working principle.

Application Field

The DTD743XMT2L can be used in a wide range of applications due to its highly integrated nature and ease of use. Some of these include:

  • Low-power, low-voltage design
  • Small-signal and AC amplification
  • Switch circuits, timer circuits, and driver circuits
  • High-frequency and digital applications
  • Waveform shaping
  • Converter circuits

Working Principle

The DTD743XMT2L operates based on the fact that when a current is applied to the base of one transistor, it will turn on and pass a larger current through its collector-emitter junction. This collector-emitter junction can then be connected to the base of the other transistor, turning it on and passing a larger current through its collector-emitter junction. This is known as the "common-base current gain" of the DTD743XMT2L.

As the current passes through the collector-emitter junction of one transistor, it also passes through a capacitor, creating a delay in the current flow. This delay allows the current to build up in the other transistor\'s collector-emitter junction, causing it to turn on as well. This is known as the "common-emitter current gain" of the DTD743XMT2L.

The current gain of the DTD743XMT2L is typically very low, but its low-power, low-capacity and low-voltage design make it suitable for designs that require minimal power consumption and space. Furthermore, the integrated nature of the DTD743XMT2L makes it suitable for use in small-signal amplification and AC applications.

Conclusion

The DTD743XMT2L is a highly integrated, low-power and low-voltage pre-biased NPN-PNP Bipolar Transistor family. Its highly integrated nature and ease of use make it suitable for a wide range of applications including low-power, low-voltage design, small-signal and AC amplifications, switch circuits, digital applications, waveform shaping and converter circuits. The working principle of the device is based on the "common-base current gain" and the "common-emitter current gain" of the two transistors contained in the device.

The specific data is subject to PDF, and the above content is for reference

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