DZ2S036M0L Allicdata Electronics
Allicdata Part #:

DZ2S036M0LTR-ND

Manufacturer Part#:

DZ2S036M0L

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: DIODE ZENER 3.6V 150MW SSMINI2
More Detail: Zener Diode 3.6V 150mW ±2.5% Surface Mount SSMini2...
DataSheet: DZ2S036M0L datasheetDZ2S036M0L Datasheet/PDF
Quantity: 15000
3000 +: $ 0.02497
6000 +: $ 0.02252
15000 +: $ 0.01958
30000 +: $ 0.01762
75000 +: $ 0.01566
150000 +: $ 0.01305
Stock 15000Can Ship Immediately
$ 0.03
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 3.6V
Tolerance: ±2.5%
Power - Max: 150mW
Impedance (Max) (Zzt): 130 Ohms
Current - Reverse Leakage @ Vr: 10µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
Operating Temperature: --
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SSMini2-F5-B
Base Part Number: DZ2S03V6
Description

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A DZ2S036M0L is a type of semiconductor specifically designed for Zener diode applications, meaning it is designed to be used in reverse bias, forming an avalanche breakdown of the junction. It is also commonly referred to as a single zener diode due to its singular construction.

The DZ2S036M0L has a breakdown voltage (Vz) of 36 volts, along with a Vf of 1.0V, a max power dissipation (Pd) of 500mW, and a maximum operating temperature (Tj) of 175°C. Its specific dielectric breakdown is 500 volts, with a capacitance of 6 pF maximum at 1 MHz. The junction capacitance is typically 0.2 pF and it is available in a 3-lead SOT-23 package.

As far as its application field, the DZ2S036M0L is suited for protection against voltage spikes, voltage regulation, and temperature compensation. It can also be used for sampling, noise suppression, bias circuits, and peak detection applications.Because of its small form factor, it works well for applications where space is limited.

The working principle of the DZ2S036M0L begins with its breakdown voltage, which is the voltage point where the diode starts to conduct. At its breakdown voltage, increases in current will cause sharp increases in voltage, forming an avalanche breakdown of the junction. As a result, a zener diode is able to protect a circuit from potential problems caused by overvoltage conditions.

The maximum power dissipation of the device is important to consider when determining its efficacy. Power dissipation is the total amount of power that can be dissipated before the device begins to overheat. If the device is exposed to too much power, it could become damaged permanently, so it is important to keep it within its specified limit. Additionally, the junction capacitance will be important to consider, as it can affect the overall performance of the device.

Finally, the maximum operating temperature is also a factor to consider for the DZ2S036M0L. Temperature will affect the device’s performance, and if it exceeds the specified limit it could fail, so it is important to ensure that the temperature conditions are kept within the specified range. Additionally, it is important to ensure that the device is properly mounted on a heat sink in order to effectively dissipate heat.

In conclusion, the DZ2S036M0L is a single zener diode designed for use in reverse bias applications, such as voltage regulation and peak detection. It has a breakdown voltage of 36 volts, a dielectric breakdown of 500 volts, and a maximum power dissipation of 500mW. It is available in a 3-lead SOT-23 package and is ideal for applications where space is limited due to its small form factor. By understanding its working principle and application field, users can get the most out of their DZ2S036M0L.

The specific data is subject to PDF, and the above content is for reference

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