DZ2S11000L Allicdata Electronics
Allicdata Part #:

DZ2S11000LTR-ND

Manufacturer Part#:

DZ2S11000L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: DIODE ZENER 11V 150MW SSMINI2
More Detail: Zener Diode 11V 150mW ±5% Surface Mount SSMini2-F5...
DataSheet: DZ2S11000L datasheetDZ2S11000L Datasheet/PDF
Quantity: 3000
Stock 3000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 11V
Tolerance: ±5%
Power - Max: 150mW
Impedance (Max) (Zzt): 30 Ohms
Current - Reverse Leakage @ Vr: 50nA @ 8V
Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
Operating Temperature: --
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SSMini2-F5-B
Base Part Number: DZ2S11
Description

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Diodes, particularly Zener diodes, are important components in many electronic circuits. A Zener diode is a type of semiconductor diode which has a reverse breakdown voltage. The DZ2S11000L is one type of Zener diode that offers a wide range of applications. This article explores the application fields and working principles of the DZ2S11000L.

Applications

The DZ2S11000L Zener diode is widely used in high-speed switching circuitry, such as in the power output stage of amplifiers. It also finds use in line modulation and switching, as well as in synchronous systems and radio frequency (RF) circuits. It can be used as a voltage regulator, temperature control, and as a protection device.

The DZ2S11000L can also be used in lighting, motor control, and motor speed control applications. It can be employed in automotive applications, including fuel injection and airbag systems. Additionally, it finds use in digital circuits, cell phones, computers, and medical devices.

Working Principle

The working principle of the DZ2S11000L Zener diode is based on the phenomenon of avalanche breakdown. When an electric field of a certain high strength is applied to the diode, electrons are accelerated enough to create electron-hole pairs, creating a conducting channel. This phenomenon is called avalanche breakdown.

When the reverse-biased diode is subjected to a high electric field, there is a abrupt increase in the current flowing through the circuit. This process is called Zener breakdown. The Zener breakdown is essential for the operation of this type of diode.

The breakdown voltage of the DZ2S11000L diode is determined by the junction temperature and the doping level of the semiconductor. The doping level of the semiconductor determines the reverse-bias voltage at which the breakdown occurs. Other important parameters include current handling capability, capacitance, and power dissipation.

Conclusion

The DZ2S11000L diode is a versatile component that can be used in a wide variety of applications. Its working principle is based on the phenomena of avalanche breakdown and Zener breakdown. It has a variety of parameters, such as breakdown voltage, current handling capability, capacitance, and power dissipation. All these parameters help make the DZ2S11000L an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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