Allicdata Part #: | EDB8132B4PM-1D-F-RTR-ND |
Manufacturer Part#: |
EDB8132B4PM-1D-F-R TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 8G PARALLEL 168FBGA |
More Detail: | SDRAM - Mobile LPDDR2 Memory IC 8Gb (256M x 32) Pa... |
DataSheet: | EDB8132B4PM-1D-F-R TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR2 |
Memory Size: | 8Gb (256M x 32) |
Clock Frequency: | 533MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.14 V ~ 1.95 V |
Operating Temperature: | -30°C ~ 85°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 168-WFBGA |
Supplier Device Package: | 168-FBGA (12x12) |
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Memory
The EDB8132B4PM-1D-F-R TR is a type of memory associated device which is heavily used in different applications. It is commonly used in consumer electronics, industrial automation and medical applications. This device is capable of producing extremely high quality audio and video images with a very short latency time.
The EDB8132B4PM-1D-F-R TR is a Memory device that features a single Digital 8-bit input/output port as well as an integrated 10-bit Pulse Width Modulator for precisely controlling the output digital signal. This device is designed to provide continuous, high-speed, and low-power operation in demanding consumer electronics and industrial applications. Furthermore, it is highly reliable and features advanced voltage protection circuitry for enhanced safety.
The EDB8132B4PM-1D-F-R TR is a versatile device that can be applied in a wide range of applications including: remote control systems, industrial audio/video equipment, automotive electronics, printer/scanner appliances, gaming consoles, medical monitor and control hardware, and more.Moreover, it can also be used in other applications such as an analog signal generator (ASG) or an oscillator.
The working principle of the EDB8132B4PM-1D-F-R TR is based on the fact that the device stores data in an integrated memory cell. This memory cell stores the digital code which is then used to generate a signal that is sent to the output port. The signal is generated in a way that the exact replica of the original digital data is sent to the output port. This principle allows for a great deal of flexibility in terms of signal generation, and it can be easily adapted to many different applications.
The EDB8132B4PM-1D-F-R TR also features a time multiplexer for controlling the output signal. This multiplexer allows the device to switch between different digital codes which can be used to generate different output signals. This feature is especially useful in applications where the output needs to change over time.
In summary, the EDB8132B4PM-1D-F-R TR is a versatile Memory device which can be applied in a wide range of applications from consumer electronics to industrial automation and medical applications. This device features a single Digital 8-bit input/output port, an integrated 10-bit Pulse Width Modulator, and a time multiplexer for precisely controlling the output digital signal. This device is designed to provide continuous, high-speed, and low-power operation in demanding applications, and it is highly reliable and features advanced voltage protection circuitry for enhanced safety.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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EDB8164B4PK-1D-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 220FB... |
EDB8132B4PB-8D-F-D | Micron Techn... | -- | 1000 | IC DRAM 8G PARALLEL 168FB... |
EDB8132B4PM-1D-F-D | Micron Techn... | -- | 1000 | IC DRAM 8G PARALLEL 168FB... |
EDB8164B4PR-1D-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 216FB... |
EDB8164B4PT-1D-F-D | Micron Techn... | -- | 1000 | IC DRAM 8G PARALLEL 216FB... |
EDB8164B4PT-1DAT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 216FB... |
EDB8164B4PT-1DIT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 216FB... |
EDB8132B4PB-8D-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 168FB... |
EDB8132B4PM-1D-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 168FB... |
EDB8164B4PK-1D-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 220FB... |
EDB8132B4PM-1DAT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 533MH... |
EDB8164B4PR-1D-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 533MH... |
EDB8164B4PT-1D-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 533MH... |
EDB8164B4PT-1DIT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 533MH... |
EDB8164B4PT-1DAT-F-R | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 533MH... |
EDB8132B4PM-1DAT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 533MH... |
EDB8132B4PM-1DAT-F-D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 533MH... |
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