Allicdata Part #: | EDB8132B4PM-1DAT-F-RTR-ND |
Manufacturer Part#: |
EDB8132B4PM-1DAT-F-R TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 8G PARALLEL 533MHZ |
More Detail: | SDRAM - Mobile LPDDR2 Memory IC 8Gb (256M x 32) Pa... |
DataSheet: | EDB8132B4PM-1DAT-F-R TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR2 |
Memory Size: | 8Gb (256M x 32) |
Clock Frequency: | 533MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.14 V ~ 1.95 V |
Operating Temperature: | -40°C ~ 105°C (TC) |
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.The EDB8132B4PM-1DAT-F-R TR is a kind of memory device, which is widely used for its powerful capacity and high efficiency. This device can be used in many different applications such as computer systems, communication systems and industrial control systems. In this article we will discuss the application field and working principle of the EDB8132B4PM-1DAT-F-R TR.
Application Field
The EDB8132B4PM-1DAT-F-R TR is mainly used in computer systems. It is a kind of memory device that is able to store large amounts of data with great speed and accuracy. It can be used for a variety of purposes such as data storage, data processing and data retrieval. The device is also used in communication systems such as cellular networks, satellite networks and internet of things (IoT). It is also used in industrial control systems such as automatic control systems and robotics.
Working Principle
The EDB8132B4PM-1DAT-F-R TR is based on dynamic random access memory (DRAM) technology. It uses a capacitor to store electrical charges which represent data. This data can be accessed in a very short amount of time. The device also uses a special circuitry to refresh the data in the memory periodically, as well as to write data to the memory.
The device works by using the voltage differences between the individual capacitors. When a charge is stored on a capacitor, the voltage on the capacitor is higher than the voltage on the other capacitors. This difference is then used to detect the charge and thus to access the data.
The EDB8132B4PM-1DAT-F-R TR memory device is highly reliable, as it can store data for up to 100 years without any data loss. It is also very fast, with a data transfer rate of up to 2GB per second. This makes it ideal for applications which require high speed and large storage capacity.
In conclusion, the EDB8132B4PM-1DAT-F-R TR is a highly reliable and efficient memory device. It can be used in a variety of applications such as computer systems, communication systems and industrial control systems. It is based on DRAM technology and uses a special circuitry to refresh the data in the memory. It is also fast, with a data transfer rate of up to 2GB per second, and can store data for up to 100 years without any data loss.
The specific data is subject to PDF, and the above content is for reference
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