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Memory

EDB8164B4PK-1D-F-R TR is a type of memory product widely used in the embedded systems field. It is an 8-bit SRAM memory product with a maximum storage capacity of 16KB and a working frequency of up to 40 MHz. This product has two kinds of power supply voltage: voltage range 2.7V~3.6V and 1.7V~2.2V. It features high access time and low power consumption. In addition, it also offers enhanced immunity against noise and offers a longer service life.

Application Field of EDB8164B4PK-1D-F-R TR

EDB8164B4PK-1D-F-R TR is widely used in the field of embedded system. It is ideal for applications such as mobile phones, MP3 players, digital cameras and other portable digital devices. Its low power consumption and high access time make it an ideal choice for battery powered applications. In addition, its low noise immunity and long service life make it ideal for applications in harsh environments.

Working Principle of EDB8164B4PK-1D-F-R TR

The working principle of EDB8164B4PK-1D-F-R TR is based on the static RAM (SRAM) technology. It is basically composed of flip-flops, multiplexers and decoders. The data is stored within a dynamic cell, which is then accessed by the address. The multiplexers act as data selectors, which allows the data to be read/write from/to the magnetic cell. Finally, the decoders decode the address and select the corresponding data within the SRAM cell.

The EDB8164B4PK-1D-F-R TR uses the asynchronous addressing scheme, wherein the output of the flip-flop determines the output of the memory. That is, when the input to the SRAM is a logic “1”, then its output is “1” and when the input is “0”, then its output is “0”. Moreover, the SRAM cell is capable of storing multiple bits of data, thereby increasing the efficiency of the memory.

Conclusion

To summarize, EDB8164B4PK-1D-F-R TR is a type of memory product which is widely used in the field of embedded systems. It is an 8-bit SRAM memory product with a maximum storage capacity of 16KB and a working frequency of up to 40 MHz. Its low power consumption and high access time makes it an ideal choice for battery powered applications. In addition, its low noise immunity and long service life make it ideal for applications in harsh environments. The working principle of EDB8164B4PK-1D-F-R TR is based on the static RAM technology, wherein it is composed of flip-flops, multiplexers, and decoders. Its asynchronous addressing scheme allows it to output logic “1” when the input is “1” and “0” when the input is “0”.

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