Allicdata Part #: | EDB8164B4PR-1D-F-RTR-ND |
Manufacturer Part#: |
EDB8164B4PR-1D-F-R TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 8G PARALLEL 533MHZ |
More Detail: | SDRAM - Mobile LPDDR2 Memory IC 8Gb (128M x 64) Pa... |
DataSheet: | EDB8164B4PR-1D-F-R TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR2 |
Memory Size: | 8Gb (128M x 64) |
Clock Frequency: | 533MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.14 V ~ 1.95 V |
Operating Temperature: | -30°C ~ 85°C (TC) |
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Memory: EDB8164B4PR-1D-F-R TR application field and working principle
Memory is an important component of a computer system. The EDB8164B4P-1D-F-R TR memory module is a type of memory module used in many computer systems. It provides advanced signal line latency, refresh interval and number of components, allowing it to be used in both high-class consumer and industrial applications.
For consumer applications, the EDB8164B4PR-1D-F-R TR offers a wide variety of features. These features include a 1.2 GHz clock frequency, an advanced DDR3 Non-parity RAM, and a 16-bit data bus. The Non-parity RAM with its advanced signal line latency is designed to allow a higher throughput and better latency than other DDR3 RAMs.
In terms of industrial applications, the EDB8164B4PR-1D-F-R TR works as an industrial-grade component. It has a 1.3 GHz clock frequency and a data latency of 10 nanoseconds. It also has an advanced ECC (Error Correction Code) which ensures data integrity in industrial environments. The EDB8164B4PR-1D-F-R TR also has a 64GB maximum capacity, which is more than enough for industrial applications.
The working principle of the EDB8164B4PR-1D-F-R TR memory module is based on two main elements: the non-parity RAM and the ECC system. The non-parity RAM is responsible for providing fast access to data stored in the memory module. It uses a DDR3 Non-parity protocol to ensure that access to data is quick and efficient. The ECC system is responsible for maintaining data integrity in the memory module. It uses an error-correction code to identify any errors in the data stored in the memory module and then correct them. The combination of these two elements ensures that the memory module is reliable and efficient.
In conclusion, EDB8164B4PR-1D-F-R TR is a reliable and efficient memory module that can be used for both consumer and industrial applications. Its advanced signal line latency and refresh interval as well as its ECC system allows it to be used in a variety of demanding applications. Thus, the EDB8164B4PR-1D-F-R TR is an important component of any computer system.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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EDB8164B4PK-1D-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 220FB... |
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EDB8132B4PM-1D-F-D | Micron Techn... | -- | 1000 | IC DRAM 8G PARALLEL 168FB... |
EDB8164B4PR-1D-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 216FB... |
EDB8164B4PT-1D-F-D | Micron Techn... | -- | 1000 | IC DRAM 8G PARALLEL 216FB... |
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EDB8132B4PM-1DAT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 533MH... |
EDB8164B4PR-1D-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 533MH... |
EDB8164B4PT-1D-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 533MH... |
EDB8164B4PT-1DIT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 533MH... |
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