Allicdata Part #: | EDBA164B2PF-1D-F-D-ND |
Manufacturer Part#: |
EDBA164B2PF-1D-F-D |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 16G PARALLEL 533MHZ |
More Detail: | SDRAM - Mobile LPDDR2 Memory IC 16Gb (256M x 64) P... |
DataSheet: | EDBA164B2PF-1D-F-D Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR2 |
Memory Size: | 16Gb (256M x 64) |
Clock Frequency: | 533MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.14 V ~ 1.95 V |
Operating Temperature: | -30°C ~ 85°C (TC) |
Mounting Type: | Surface Mount |
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Memory is an integral part of embedded electronic circuits and EDBA164B2PF-1D-F-D is a type of non-volatile memory. It is designed using advanced CMOS technology and is a one-time programmable memory. It is an ideal choice for applications where data must be retained in the absence of power.
Application Field
EDBA164B2PF-1D-F-D is commonly used in embedded flash memories. It is used for a wide variety of applications such as industrial automation control, machine vision systems, data communication equipment, security and authentication, renewable energy, power supply systems, automotive electronics and other embedded electronics. It can also be used in devices that require data to be stored in a non-volatile memory. It is specially designed for long-term storage and requires low power consumption.
Working Principle
EDBA164B2PF-1D-F-D memory works on a simple principle. It is a non-volatile type of memory, meaning that it does not require constant power supply. It has an array of non-volatile electrode cells that are programmed with data. The data is stored permanently in the memory cells and will remain there until the cell is electrically erased. When the electrical erasing process is complete, the device can be reprogrammed using new data.
The memory cells are connected in series and parallel configurations. Each cell has one or more memory cells that are connected to each other. The connections form a matrix that enables data to be read, written, and erased. The electrical erasing process is used to clear the cells and the reprogramming process is used to store new data. When the electrical erasing process is complete, the power supply is cut off and the cells remain in the state they were originally in. This is how the data is preserved in the memory.
EDBA164B2PF-1D-F-D is also known as a one-time programmable (OTP) device. This means that once the data has been programmed, it cannot be changed. This makes it ideal for applications that require secure data storage. This type of memory is becoming increasingly popular due to its low power consumption, wide operational temperature range, and its ability to store large amounts of data.
EDBA164B2PF-1D-F-D is a reliable and cost-effective memory solution for embedded systems. Its versatility and low power consumption make it a popular choice for embedded electronics. It is a crucial component for various industrial, automotive and other embedded applications, where data must be stored securely and reliably.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
EDBA164B2PF-1D-F-D | Micron Techn... | -- | 1000 | IC DRAM 16G PARALLEL 533M... |
EDBA164B2PR-1D-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 216F... |
EDBA232B2PB-1D-F-D | Micron Techn... | -- | 1000 | IC DRAM 16G PARALLEL 533M... |
EDBA232B2PD-1D-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 533M... |
EDBA232B2PF-1D-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 168F... |
EDBA164B2PF-1D-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 533M... |
EDBA232B2PB-1D-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 533M... |
EDBA232B2PD-1D-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 533M... |
EDBA232B2PF-1D-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 168F... |
EDBA164B2PR-1D-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 216F... |
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