Allicdata Part #: | EDBA164B2PR-1D-F-RTR-ND |
Manufacturer Part#: |
EDBA164B2PR-1D-F-R TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 16G PARALLEL 216FBGA |
More Detail: | SDRAM - Mobile LPDDR2 Memory IC 16Gb (256M x 64) P... |
DataSheet: | EDBA164B2PR-1D-F-R TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR2 |
Memory Size: | 16Gb (256M x 64) |
Clock Frequency: | 533MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.14 V ~ 1.95 V |
Operating Temperature: | -30°C ~ 85°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 216-WFBGA |
Supplier Device Package: | 216-FBGA (12x12) |
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The EDBA164B2PR-1D-F-R TR belongs to the memory category and is a dynamic RAM that stores data as charge magnetically. It is made up of an array of DRAM cells and is considered a “fast” RAM type. It is also known as a “cache” RAM, being able to quickly supply data to the CPU during application tasks.
The EDBA164B2PR-1D-F-R TR is composed of an integrated circuit containing 816,384 bits of synchronous dynamic random access memory (SDRAM) organized as 16 banks of 5,096 by 32 bits. The memory array is organized by row and column and is designed to operate with a single +3.3V power supply, allowing for the highest operational rate when accessed at the specified CLK frequency.
The EDBA164B2PR-1D-F-R TR is used in a variety of applications, ranging from mobile phones, networking components, and medical equipment to digital imaging, embedded systems, and aerospace industry. It has a high-speed and low power consumption, which makes it highly suitable for working in tight spaces and in fast-paced environments.
The EDBA164B2PR-1D-F-R TR has a dynamic random access memory (DRAM) operating principle that is distinct from the static random access memory (SRAM) principle. In DRAM operation, a charge is stored in a capacitor within each cell that is maintained by a refresh cycle as well as by read and write cycles. This type of memory keeps its charge until accessed, at which points the transistors act as switches and access the data inside the cell.
The EDBA164B2PR-1D-F-R TR is designed to support bursts of two to eight transfers with the capability of Continuous EDO Burst, Page Mode, and Fast Page Mode operations. It provides both synchronous DRAM (SDRAM) and asynchronous DRAM (ADRAM) operations and is fabricated with CMOS logic and advanced drain isolation technology.
The EDBA164B2PR-1D-F-R TR is designed to be extremely reliable, with a rated endurance of 1,000,000 write cycles. It also has several features for protection against hazardous conditions such as Over temperature, program disturb, data retention, noise immunity and ESD protection on certain pins. Additionally, it has noise and data bus glitch detect and protection features to ensure data integrity.
In conclusion, the EDBA164B2PR-1D-F-R TR is a type of dynamic RAM that is used in a wide range of industries for high-speed operations. Its operating principle involves storing a charge in a capacitor within each cell that is accessed when needed. It also has a variety of protective features to ensure its reliability and data integrity making it a great choice for use in tight spaces and applications with high-speed demands.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
EDBA164B2PF-1D-F-D | Micron Techn... | -- | 1000 | IC DRAM 16G PARALLEL 533M... |
EDBA164B2PR-1D-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 216F... |
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EDBA232B2PF-1D-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 168F... |
EDBA164B2PF-1D-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 533M... |
EDBA232B2PB-1D-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 533M... |
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EDBA164B2PR-1D-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 216F... |
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