EDBA232B2PF-1D-F-R TR Allicdata Electronics
Allicdata Part #:

EDBA232B2PF-1D-F-RTR-ND

Manufacturer Part#:

EDBA232B2PF-1D-F-R TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 16G PARALLEL 168FBGA
More Detail: SDRAM - Mobile LPDDR2 Memory IC 16Gb (512M x 32) P...
DataSheet: EDBA232B2PF-1D-F-R TR datasheetEDBA232B2PF-1D-F-R TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 16Gb (512M x 32)
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-TFBGA
Supplier Device Package: 168-FBGA (12x12)
Description

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Introduction to EDBA232B2PF-1D-F-R TR

EDBA232B2PF-1D-F-R TR (also known as Enhanced Dynamic Buffer Amplifier 232B2PF-1D-F-R Transistor) is an integrated memory circuit suitable for use in modern digital devices and systems. It is an integral part of the EDBA system family, and is used as an interface between the DRAM or DRAM module and the processor. EDBA232B2PF-1D-F-R TR is designed with an emphasis on high performance and optimal efficiency, providing excellent reliability and data integrity even in the most demanding applications.

Applications of EDBA232B2PF-1D-F-R TR

The EDBA232B2PF-1D-F-R TR is mainly used in memory modules and memory systems. It is suitable for applications such as data buffering, data write back, refresh timing, and DRAM control. It is also widely used in devices that require high speed and a large capacity of memory, such as personal computers, servers, supercomputers, and mainframes.

Working Principle of EDBA232B2PF-1D-F-R TR

The EDBA232B2PF-1D-F-R TR is composed of a set of two-input transistors, which are connected in a holistic architecture. When applied with a voltage pulse, the voltage source charges the transistors and the circuit is turned on. The TWO output of the transistors is the amplified signal from the input. When activation is reset, the voltage is discharged from the transistors and the circuit is turned off. In addition, the EDBA232B2PF-1D-F-R TR has power-saving technologies, such as dynamic clamping and low-power modes, which can reduce the device’s total energy consumption.

Conclusion

The EDBA232B2PF-1D-F-R TR is a powerful integrated circuit with excellent memory and operation performance. It is primarily used in memory systems, devices, and memory modules, providing high levels of reliability and data integrity. It can be used in a wide range of applications, ranging from personal computers to mainframes. Furthermore, its power-saving technologies allow for improved energy efficiency. Therefore, the EDBA232B2PF-1D-F-R TR is an ideal choice for any device needing powerful memory and efficient operation.

The specific data is subject to PDF, and the above content is for reference

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