EDBA232B2PB-1D-F-D Allicdata Electronics
Allicdata Part #:

EDBA232B2PB-1D-F-D-ND

Manufacturer Part#:

EDBA232B2PB-1D-F-D

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 16G PARALLEL 533MHZ
More Detail: SDRAM - Mobile LPDDR2 Memory IC 16Gb (512M x 32) P...
DataSheet: EDBA232B2PB-1D-F-D datasheetEDBA232B2PB-1D-F-D Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 16Gb (512M x 32)
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -30°C ~ 85°C (TC)
Description

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Memory

EDBA232B2PB-1D-F-D application field and working principle

EDBA232B2PB-1D-F-D is a dynamic random access memory (DRAM) module developed by Elpida Memory, Inc. (Elpida). The module is suitable for use in a variety of applications and can be used for high performance and reliable data storage.

The EDBA232B2PB-1D-F-D module is a double-data rate (DDR) synchronous dynamic random access memory module. It is designed to provide both high performance and reliability with a maximum data transfer rate of 1066MT/s. The module is composed of sixteen 16Mx8 bit chips and utilizes an Error Correcting Code (ECC) which provides single bit error correction and double bit error detection.

EDBA232B2PB-1D-F-D modules can be used for a wide range of applications including servers, workstations, desktops, laptops, and other embedded systems. They are well suited for applications that require large amounts of data storage or require high levels of speed and performance.

The working principle of EDBA232B2PB-1D-F-D is based on the concept of dynamic random access memory (DRAM). This type of memory stores data in a capacitor and uses voltages to read, write, and refresh the information stored in the capacitor. When a voltage is applied to a bit, the data stored in the corresponding capacitor is read. When a different voltage is applied, the data is written to the capacitor. The capacitor must be periodically refreshed in order to maintain the data stored within it.

The EDBA232B2PB-1D-F-D module utilizes an Error Correcting Code (ECC) to ensure that data stored in the device is accurate and reliable. The module also utilizes on-die termination to reduce voltage droops caused by long interconnects. The module is also capable of power-management features such as two-phase clocking, self-refresh mode, and deep power-down mode.

In conclusion, EDBA232B2PB-1D-F-D is a dynamic random access memory (DRAM) module developed by Elpida Memory, Inc. It is suitable for use in a variety of applications and can provide high performance and reliable data storage. It utilizes an Error Correcting Code (ECC) to ensure that data stored in the device is accurate and reliable, and also utilizes on-die termination to reduce voltage droops caused by long interconnects. The module is also capable of power-management features such as two-phase clocking, self-refresh mode, and deep power-down mode.

The specific data is subject to PDF, and the above content is for reference

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