EDF8132A3PK-GD-F-D

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EDF8132A3PK-GD-F-D Application Field and Working Principle

EDF8132A3PK-GD-F-D is a 4MBit high-density NAND Flash Memory product, developed by Japan Toshiba Memory Corporation. It is commonly used in embedded systems and various industrial applications, such as medical equipment, automotive electronics, consumer electronics, etc. The memory product is widely used for its high reliability, cost-effective performance and small size.

Memory Features and Specifications

The EDF8132A3PK-GD-F-D memory product features a three-dimensional architecture and is a one-time programmable (OTP) type of memory. The EDF8132A3PK-GD-F-D provides 4Mbits of storage, employing Multi Level Cell (MLC) technology which enables reliable storage of 8 bits per cell, yielding a storage capacity of 0.5 megabytes per unit. The operating temperature range of the memory product is -20°C to +70°C.

The features and specifications of the memory product include: Program execution times of 10 microseconds under a 5V working voltage; READ/WRITE cycle time of 20 nanoseconds; High write endurance of up to 5,000 write/erase cycles; High data reliability of up to 6 levels of error bit correction; Low power consumption; Built-in DMA and other advanced features; Supported secure digital applications.

Working Principle

The EDF8132A3PK-GD-F-D memory product operates using an internal architecture in which each memory cell is divided into two equal parts. The upper part contains a single transistor and the lower part consists of two transistors and a capacitor. The upper transistor stores the cell data, while the two transistors and capacitor provide a logic circuit to determine the data status. The logic circuit controls the flow of current through either the upper or the lower halves of the cell, thus switching the data stored in the upper part between “0” and “1”.

Read operations are simple. When a particular cell is connected to the read path, the logic circuit determines the polarity of the cell and therefore, the binary value it contains. Write operations involve the conversion of the binary value to be written into a voltage, which is then applied to the cell. The logic circuitry then evaluates the voltage and configures the cell accordingly.

The Multi Level Cell (MLC) technology used in the EDF8132A3PK-GD-F-D helps in optimizing the write/erase cycles. As it allows more data to be stored in a single cell, the wear and tear caused on the cell can be reduced. This further helps to increase the overall life of the memory product.

Applications

The EDF8132A3PK-GD-F-D memory product find applications in a variety of fields, such as medical equipment, automotive electronics, consumer electronics and media, embedded systems, gaming, automotive and many more. The product is used due to its high reliability, cost-effective performance and small size. Its small form factor and wide temperature range also makes it suitable for many applications, such as portable computers, handheld devices and medical equipment.

The memory is also used for secure digital applications, such as NAND flash memory cards and USB flash drives. The product can be used for storing valuable data, both in commercial and industrial applications. Additionally, the EDF8132A3PK-GD-F-D can also be used in digital cameras, PDAs and other such products.

Conclusion

The Toshiba EDF8132A3PK-GD-F-D is a 4MBit NAND Flash Memory product, used in embedded systems and various industrial applications. It features a three-dimensional architecture and is a one-time-programmable type of memory. It provides 4Mbits of storage and can operate in temperatures up to 70°C. The product has a high reliability, cost-effective performance and small size, making it well suited for applications in medical equipment, automotive electronics, consumer electronics and media, embedded systems and gaming.

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