EDF8164A3MC-GD-F-R

Series:	--
Part Status:	Active
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM - Mobile LPDDR3
Memory Size:	8Gb (128M x 64)
Clock Frequency:	800MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	1.14 V ~ 1.95 V
Operating Temperature:	-30°C ~ 85°C (TC)

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EDF8164A3MC-GD-F-R is a type of memory product which is widely used in many electronic products. It is a type of non-volatile memory, able to retain data even when there is no power supply. This product can be used in various applications such as medical, automotive, industrial and many more.The EDF8164A3MC-GD-F-R comes in the form of a 4Mbit asynchronous dual port memory IC. It is an industry standard memory IC which is fully compliant with all popular logic families. This IC has two separate ports, each with its own 8kx16 bit addressable memory space. This allows for a maximum of sixteen simultaneous accesses per clock cycle. The EDF8164A3MC-GD-F-R is a low power memory IC. It works by using a small amount of power to store and access data. This makes it ideal for use in applications where power conservation is a critical concern. It also has a very low access time, making it suitable for applications requiring high speed data transfer.In terms of design, the EDF8164A3MC-GD-F-R memory IC is a highly stable and reliable device. It is designed to meet MIL-STD-883 grade 1 grade 2 temperature and storage requirements. It is also designed to prevent data corruption in extreme temperatures, even down to -160°C. In terms of usage and performance, the EDF8164A3MC-GD-F-R memory IC is suitable for a wide range of applications. It is used in military and aerospace applications for data storage and retrieval. It is also used in medical applications, automotive systems and industrial automation. Additionally, the device is designed to be highly scalable and can be upgraded to higher memory capacities.When it comes to speed, the EDF8164A3MC-GD-F-R memory IC is a fast, reliable and powerful device. It has a fast read and write speed, which allows for high speed data access and data storage. Furthermore, the device has a fast standby mode, which allows it to instantly switch to a low power state when there is no access requests. This makes it suitable for use in applications involving continuous data access. The EDF8164A3MC-GD-F-R memory IC is also highly reliable due to its advanced error correction technology. It has two levels of error correction, which ensure that data is properly stored and retrieved from the device. Furthermore, the device also has a built-in self-test mode, which can detect and fix problems in the memory. This provides assurance that data is properly stored and is not affected by any external influences.In conclusion, the EDF8164A3MC-GD-F-R is an excellent choice for applications that require low power consumption and fast data access. It is a highly reliable, powerful and scalable device, which can be used for a variety of tasks. Furthermore, the device has a built-in self-test mode, which helps to prevent data corruption and errors. Finally, its fast read and write speeds make it ideal for data intensive applications.

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