Allicdata Part #: | EDF8132A3PK-GD-F-RTR-ND |
Manufacturer Part#: |
EDF8132A3PK-GD-F-R TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 8G PARALLEL 800MHZ FBGA |
More Detail: | SDRAM - Mobile LPDDR3 Memory IC 8Gb (256M x 32) Pa... |
DataSheet: | EDF8132A3PK-GD-F-R TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR3 |
Memory Size: | 8Gb (256M x 32) |
Clock Frequency: | 800MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.14 V ~ 1.95 V |
Operating Temperature: | -30°C ~ 85°C (TC) |
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Memory is an integral component of any computer or electronic device. It stores data, programs and instructions that can be used to perform various tasks. EDF8132A3PK-GD-F-R TR is a type of memory chip used in many applications. This article will outline the application field and working principle of the EDF8132A3PK-GD-F-R TR.
EDF8132A3PK-GD-F-R TR is a static random access memory (SRAM) chip used primarily in embedded systems, automotive applications, and FPGA designs. It is used to store program code and data and can be used as both read and write memory. The chip contains 8K words of 32 bits each and a battery backup for backing up data in the event of power loss or system shutdown.
The working principle of EDF8132A3PK-GD-F-R TR is based on memory cells, which are configured as four-transistor SRAMs. The memory cells are arranged in an 8K-word array, comprising 256 rows and 32 columns in each row. Each cell consists of two access transistors, one sense amplifier and one storage device. The access transistors are used to select the memory cell to be read or written and the sense amplifier is used to detect the state of the memory cell data. The storage device is the main component of a memory cell and it stores the binary data.
When writing to the memory cell, the access transistors are activated to let the data be written into the storage device. The sense amplifier is then used to detect the state of the memory cell data to ensure that the data is successfully written. For reading from the memory cell, the same access transistors are used to select the memory cell and the sense amplifier is used to detect the state of the memory cell data.
The EDF8132A3PK-GD-F-R TR can be used in a variety of applications. It is suitable for applications that require data retention during system shutdowns, as it has a built-in battery backup. It is also suitable for applications that require high read and write speeds, as it has a high access speed of 35ns. Additionally, the chip can be used in embedded systems and automotive applications, as it is compatible with a wide range of industry standards.
In conclusion, the EDF8132A3PK-GD-F-R TR is a type of static random access memory chip used in a variety of applications. It has a 4-transistor memory cell structure and can retain data during system shutdowns. It is suitable for applications that require high read and write speeds, as well as applications that require compatibility with a wide range of industry standards. The EDF8132A3PK-GD-F-R TR is a reliable and efficient memory solution for many types of applications.
The specific data is subject to PDF, and the above content is for reference
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