Allicdata Part #: | EDF8164A3PF-JD-F-D-ND |
Manufacturer Part#: |
EDF8164A3PF-JD-F-D |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 8G PARALLEL 933MHZ FBGA |
More Detail: | SDRAM - Mobile LPDDR3 Memory IC 8Gb (128M x 64) Pa... |
DataSheet: | EDF8164A3PF-JD-F-D Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR3 |
Memory Size: | 8Gb (128M x 64) |
Clock Frequency: | 933MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.14 V ~ 1.95 V |
Operating Temperature: | -30°C ~ 85°C (TC) |
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The EDF8164A3PF-JD-F-D is a type of high-speed, low-power static random access memory (SRAM). It is intended for use in the industrial and commercial sector due to its impressive reliability, efficiency and low power consumption. This memory is ideal for applications where memory access and data storage requirements are high. The EDF8164A3PF-JD-F-D is specifically designed to meet the unique needs of the industrial and commercial sectors, as it is capable of handling very large amounts of data while consuming minimal power.
The EDF8164A3PF-JD-F-D is a perfect choice for use in industrial automation systems and machine controls, data acquisition systems, networked systems, memory caching systems, and embedded systems. In addition, this memory can be used in the automotive, aerospace, transportation, military, and medical sectors, as well as in the financial industry. It is also suitable for applications where high data throughput and low power consumption are required.
The working principle of the EDF8164A3PF-JD-F-D is based on the same principles as other SRAMs. It uses four transistors to store one bit of data. The four transistors consist of two write transistors, a set (reset) transistor, and a reset (clear) transistor. The two write transistors are responsible for writing data to the memory while the reset and clear transistors hold the data. The information is retained even if the power is removed, as all of the transistors are completely conductive, thus ensuring data persistence.
The memory is built with an advanced architecture and circuitry which allows it to offer high-speed and efficient data access. Its built-in self-refresh feature ensures data retention even when the power is off. The built-in circuitry helps protect the stored data from errors and ensures that the stored data is not lost as a result of power outages.
The EDF8164A3PF-JD-F-D memory is a cost-effective solution which is capable of providing reliable and consistent performance. It is designed to provide sustained long-term data storage and retrieval capabilities, and its power-saving features make it a great choice for applications where energy efficiency and low power consumption are important considerations. Its advanced architecture and circuitry ensure that data is handled quickly and efficiently with minimal power consumption.
The EDF8164A3PF-JD-F-D is a highly reliable and efficient type of static random access memory which is perfect for use in a wide variety of industrial and commercial applications. Its efficient data access and low power consumption make it a perfect choice for applications where data storage and retrieval are important. Its advanced architecture and circuitry help ensure that data is stored securely and can be accessed quickly and reliably.
The specific data is subject to PDF, and the above content is for reference
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EDF8132A3MA-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 800MH... |
EDF8132A3MA-JD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 933MH... |
EDF8132A3PB-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 800MH... |
EDF8132A3PB-JD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 933MH... |
EDF8132A3PD-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 800MH... |
EDF8132A3PF-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 800MH... |
EDF8132A3PK-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 800MH... |
EDF8164A3MA-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 800MH... |
EDF8164A3MA-JD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 933MH... |
EDF8164A3PF-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 800MH... |
EDF8164A3PF-JD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 933MH... |
EDF8164A3PK-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 800MH... |
EDF8164A3PK-JD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 933MH... |
EDF8164A3PK-JD-F-R | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 933MH... |
EDF8164A3MC-GD-F-R | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 800MH... |
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EDF8164A3MC-GD-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 800MH... |
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