EFC8811R-TF Allicdata Electronics
Allicdata Part #:

EFC8811R-TFOSTR-ND

Manufacturer Part#:

EFC8811R-TF

Price: $ 0.18
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2N-CH 6CSP
More Detail: Mosfet Array 2 N-Channel (Dual) Common Drain 2.5...
DataSheet: EFC8811R-TF datasheetEFC8811R-TF Datasheet/PDF
Quantity: 1000
5000 +: $ 0.16628
Stock 1000Can Ship Immediately
$ 0.18
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): --
Current - Continuous Drain (Id) @ 25°C: --
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
Gate Charge (Qg) (Max) @ Vgs: --
Input Capacitance (Ciss) (Max) @ Vds: --
Power - Max: 2.5W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: 6-CSP (1.77x3.54)
Description

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The EFC8811R-TF is an integrated circuit designed to control current or voltage output. It is a type of transistor array which contains eight N-Channel enhancement mode field effect transistors (N FETs).

N-channel FETs are often used in circuit designs because of their low on-state resistance and their ability to handle high current loads. The EFC8811R-TF is particularly well-suited for applications that involve high current requirements. This type of transistor array is made up of eight high-performance N-channel devices, which are ideal for use in building high-efficiency power conversion systems and motor control applications.

The EFC8811R-TF employs an "inverted-MOSET" structure which provides low drain-to-source voltage drop and low gate-to-source turn-on voltage. This type of circuit is also designed to provide excellent power dissipation and thermal performance. In addition, the EFC8811R-TF provides temperature level protection and short-circuit protection.

The working principle of the EFC8811R-TF is based on the fact that current will flow between the source and drain when there is a voltage difference between them. When the voltage difference is sufficient, current flows through the N-channel. When the channel is off, no current will flow, and the EFC8811R-TF circuit will be in its off state.

The EFC8811R-TF can be used in a wide range of applications, including power and audio amplifier circuits for consumer electronics, motor control circuits for industrial applications, and power distribution networks. It can also be used in switch-mode power supplies and in dc-dc converters and other electronic applications.

The advantages of using the EFC8811R-TF in circuit designs are that it offers superior efficiency and high power conversion rates. It also offers simple and intuitive operation and is designed to withstand high power and temperature levels. Additionally, the EFC8811R-TF provides short-circuit and over-temperature protection.

In summary, the EFC8811R-TF is a highly integrated transistor array which is ideal for use in powering motor control and switch-mode power systems. Its use in various applications provides increased efficiency, better power conversion rates, and improved reliability. It provides superior temperature level protection and short-circuit protection. Finally, its relatively low price makes it an attractive option for many designs.

The specific data is subject to PDF, and the above content is for reference

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