Allicdata Part #: | EFC8822R-TF-ND |
Manufacturer Part#: |
EFC8822R-TF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH DUAL 6CSP |
More Detail: | Mosfet Array |
DataSheet: | EFC8822R-TF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Obsolete |
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The EFC8822R-TF is a field-effect transistor (FET) array by TO-220F package, that combines the multiple FETs in a single chip. The EFC8822R-TF has 8 channels per package, offering excellent performance and allowing for increased device integration. It is widely used for a variety of applications, such as switching, amplification and data acquisition.
Application Field
The EFC8822R-TF is a FET array suitable for general purpose applications. It is typically used to control power, amplifying the signal and switching audio signals in the audio and video equipment, portable speakers, automotive audio, and so forth. Owing to its low current consumption and high switching speeds, the device is suitable for use in high-speed digital circuits and logic gates. Moreover, it is also suitable for making transistors and gate drives for power MOSFETs and IGBTs.
Working Principle
The functioning principle behind the EFC8822R-TF is based on the Field-Effect Transistor (FET). It is composed of seperate N-channel and P-channel transistors, which are connected in a packet known as the source-drain conduction path. This packet is used to create an electric field between the drain and the source of the transistors. When a electrical signal is applied to the gate terminal, an electric field is induced. The resulting electric field modulates the current flow between the source and the drain of the transistor.
The EFC8822R-TF is designed in such a way that it can handle a maximum current flow of 12 A per channel with a maximum voltage of 30 V. It is also suitable for temperature ranging from -40 °C to +125 °C, making it suitable for use in both high and low temperature environments. The device also has a high immunity to EMI noise and high ESD susceptibility, making it an ideal choice for high frequency applications.
The features make the EFC8822R-TF ideal for use in switching and amplifying of audio and video signals in consumer electronics. Moreover, the device is also suitable for general purpose switching, logic gate drives and other applications related to power conversion.
In sum, the EFC8822R-TF is a highly integrated FET array that is suitable for a lot of applications ranging from audio and video amplifying to switching and power conversion. It is also highly tolerant to ESD noise and wide temperature range, making it an excellent choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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