EG01AV

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EG01AV is a type of single, rectifier diode which has a typical working voltage of 800 Volts and a typical current density of 12 Amps per mm of diode junction. It is widely used in medium- and high-power energy applications, such as electric power distribution and mobile device charging.

A rectifier diode is an electronic semiconductor that allows current in one direction but blocks current in the opposite direction. The main purpose of a rectifier diode is to convert AC input from an external power source into DC output. Transient voltage protection is another important application of a rectifier diode, as it prevents over-voltage damage to other components in the circuit. Generally, rectifier diodes are constructed from silicon, selenium, germanium, and other semiconductor materials.

EG01AV is classified as a single rectifier diode. It has a peak repetitive reverse voltage rating of 800V and a peak repetitive forward current of 500A. The device can be operated at a junction temperature of up to 175°C and has an average forward current rating of 12A per mm of diode junction. This diode is also designed with an internal electro-static Guard Ring to help reduce stress on the p-n junction and enable operation at higher power levels.

The EG01AV diode has a unique “soft recovery” characteristic. This feature limits the current spikes during switching which reduces power dissipation and switching losses in the device .This feature also helps to maximize lifetime and reduce the thermal stress of the p-n junction. In addition, it has a low forward voltage drop, making it suitable for use in applications with low power consumption such as chargers and backlighting. Its low reverse leakage current allows protection from over-voltage.

EG01AV is a highly efficient rectifier diode suitable for a wide range of medium- and high-power energy applications. Its “soft recovery” characteristic and low voltage drop make it ideal for energy conversion applications. Additionally, its electro-static Guard Ring allows it to work at higher power levels while avoiding p-n junction damage. Protection from over-voltage is also ensured by its low reverse leakage current. 

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