| Allicdata Part #: | EG01V-ND |
| Manufacturer Part#: |
EG01V |
| Price: | $ 0.12 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Sanken |
| Short Description: | DIODE GEN PURP 400V 700MA AXIAL |
| More Detail: | Diode Standard 400V 700mA Through Hole |
| DataSheet: | EG01V Datasheet/PDF |
| Quantity: | 1000 |
| 10000 +: | $ 0.10716 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 400V |
| Current - Average Rectified (Io): | 700mA |
| Voltage - Forward (Vf) (Max) @ If: | 2V @ 700mA |
| Speed: | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr): | 100ns |
| Current - Reverse Leakage @ Vr: | 50µA @ 400V |
| Capacitance @ Vr, F: | -- |
| Mounting Type: | Through Hole |
| Package / Case: | Axial |
| Supplier Device Package: | -- |
| Operating Temperature - Junction: | -40°C ~ 150°C |
Description
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EG01V is a single rectifier diode which provides high power dissipation in a variety of circuit designs, with a wide variety of applications. This device primarily consists of a PN junction and is used for conduction in one direction and blocking of current in the opposite direction. In some cases, a single diode may be sufficient for the application, but in other cases a more complex device is needed. The EG01V is optimized to provide an effective and efficient diode with a combination of high reverse voltage rating, low forward current, low on-state voltage drop and low leakage current. The device is made up of a single PN junction, and is protected against a wide range of temperatures and humidity levels. The EG01V is used in many applications including power switching, over-voltage protection, AC to DC rectification, and DC to DC conversion. It can also be used to protect sensitive devices such as integrated circuit chips against electrostatic discharge. Additionally, the EG01V is used for transients suppression and amplitude-modulated-level control.The adaptability of the EG01V means that it can be used in a variety of applications, with its operating voltage usually ranging from 50V to 1000V and with a peak current capability of up to 3A. This range of voltages and peak currents are usually optimal for many of the applications where the device is used. The working principle of the EG01V is based on the behavior of a PN junction. When a voltage is applied to the PN junction, electrons from the P-type material are attracted to the N-type material and holes from the N-type material are attracted to the P-type material. This results in the area near the junction becoming depleted, thus forming a protective space-charge layer. When electric current flows through the diode, it flows in one direction. This is because in one direction, the voltage applied is higher than the built-in potential, while in the other direction, the voltage is lower than the built-in potential. This mechanism creates an electric current flow in one direction and blocks the current in the opposite direction. The amount of current that passes through the EG01V is determined by the resistance in the current path. The higher the resistance, the lower the current. The lowest current that can be passed through the EG01V is usually determined by the voltage drop across the diode. In conclusion, EG01V is a single rectifier diode that offers high power dissipation in a variety of circuit designs with a wide variety of applications. This device primarily consists of a PN junction and is used for conduction in one direction and blocking of current in the opposite direction. The working principle of the EG01V is based on the behavior of a PN junction and the current flowing through the diode is determined by the resistance in the current path.
The specific data is subject to PDF, and the above content is for reference
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EG01V Datasheet/PDF