| Allicdata Part #: | EGP20AHE3/73-ND |
| Manufacturer Part#: |
EGP20AHE3/73 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE GEN PURP 50V 2A DO204AC |
| More Detail: | Diode Standard 50V 2A Through Hole DO-204AC (DO-15... |
| DataSheet: |  EGP20AHE3/73 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | SUPERECTIFIER® |
| Packaging: | Tape & Box (TB) |
| Part Status: | Obsolete |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 50V |
| Current - Average Rectified (Io): | 2A |
| Voltage - Forward (Vf) (Max) @ If: | 950mV @ 2A |
| Speed: | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr): | 50ns |
| Current - Reverse Leakage @ Vr: | 5µA @ 50V |
| Capacitance @ Vr, F: | 70pF @ 4V, 1MHz |
| Mounting Type: | Through Hole |
| Package / Case: | DO-204AC, DO-15, Axial |
| Supplier Device Package: | DO-204AC (DO-15) |
| Operating Temperature - Junction: | -65°C ~ 150°C |
| Base Part Number: | EGP20A |
Description
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EGP20AHE3/73 Diodes - Rectifiers - Single is a PN junction diode which is reverse biased and used for operating at a current source of 20A in its rectification process. This diode is made with a single epitaxial planar chip for providing an electrical isolation between anode and cathode.The main application area of the EGP20AHE3/73 is in circuit protection application as its reverse biased junction helps to protect the equipment from high voltage or short circuits. It is also used in rectification circuits as it converts alternating current to direct current with the help of its reverse-biased junction.The EGP20AHE3/73 is a high power semiconductor diode which consists of a silicon chip construction with a ceramic terminal coating. This diode has a maximum forward voltage of 5V and can tolerate reverse voltage up to 50V. The EGP20AHE3/73 has a normal operating temperature range between -40°C to 125°C and a maximum junction temperature of 175°C.The working principle of the EGP20AHE3/73 is based on its PN junction characteristic. This junction has a voltage drop built in to it, which makes it a better choice over other power rectifiers. When the EGP20AHE3/73 is reverse biased, the junction starts to conduct current, which leads to the generation of a current-voltage curve. In the forward bias, the junction breaks down with a voltage drop and once this voltage is reached the current starts to flow. The generated short high-power pulse then passes through the load and gets rectified in the process.The EGP20AHE3/73 has an optimum design for providing high surge currents with low forward voltages and low capacitances. The anode and cathode of the diode have an additional guard ring structure that helps to reduce both shunt and leak current of the device. The efficient guard ring lays stress on the junction breakdown voltage, making the EGP20AHE3/73 a great choice for rectification purposes.In conclusion, it can be said that the EGP20AHE3/73 Diodes - Rectifiers - Single can be used for various applications in rectification. It has a PN junction which is reverse biased for proper operation of the device. It has a low forward voltage as well as low capacitance and provides a high surge current due to its efficient guard ring construction.The specific data is subject to PDF, and the above content is for reference
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| EGP20D | ON Semicondu... | -- | 1000 | DIODE GEN PURP 200V 2A DO... |
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| EGP20G-E3/54 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 400V 2A DO... |
| EGP20AHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
| EGP20BHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
| EGP20CHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
| EGP20DHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
| EGP20FHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 300V 2A DO... |
| EGP20GHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 2A DO... |
| EGP20AHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
| EGP20BHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
| EGP20CHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
| EGP20DHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
| EGP20FHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 300V 2A DO... |
| EGP20GHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 2A DO... |
| EGP20A-E3/73 | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 50V 2A DO2... |
| EGP20B-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 2A DO... |
| EGP20C-E3/73 | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
| EGP20F-E3/73 | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 300V 2A DO... |
| EGP20G-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 400V 2A DO... |
| EGP20C-E3/54 | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
| EGP20F-E3/54 | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 300V 2A DO... |
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| EGP20D-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
| EGP20F-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 300V 2A DO... |
| EGP20G-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 400V 2A DO... |
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