EGP20FHE3/54 Allicdata Electronics
Allicdata Part #:

EGP20FHE3/54-ND

Manufacturer Part#:

EGP20FHE3/54

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 300V 2A DO204AC
More Detail: Diode Standard 300V 2A Through Hole DO-204AC (DO-1...
DataSheet: EGP20FHE3/54 datasheetEGP20FHE3/54 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: SUPERECTIFIER®
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 2A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 150°C
Base Part Number: EGP20F
Description

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The EGP20FHE3/54 is a single rectifier diode in the SOD123 (Small Outline Diode) package, with low power handling capacity. It is a useful component for applications that require low on-state voltage drop and higher forward current, like high temperature circuits requiring pumping, power supplies, and DC-DC converters. It is also suitable for protection circuits and produces the desired current range with a moderate forward voltage drop. The power handling capacity for EGP20FHE3/54 is 4A, and its maximum repetitive peak reverse voltage is 400 volts.

The construction of EGP20FHE3/54 is based on a PN structure with an intrinsic region between the anode and the cathode. The substrate of the diode is made up of semiconductor n-type material, while the resonator is a p-type material. The intrinsic region forms a junction which will allow current flow in the forward direction only. The diode also has a layer of silicon dioxide overlaying the semiconductor material, which helps to reduce electrical leakage.

The EGP20FHE3/54 is designed to provide efficient power handling in circuits requiring high current capabilities. It has a low forward voltage drop and a high reverse breakdown voltage rating. Its tolerance is 0.05%, and it can use up to 400 volts of power. It is also capable of being used with a wide variety of transistors and other components.

EGP20FHE3/54 is used in multiple applications requiring high current handling. It is suitable as an AC or DC power rectifier in power supplies and enables efficient power conversion. It is also used to protect circuits and components from over voltage and over current. It is used in DC-DC converters, for the correction of pulses, for gate drives and more.

EGP20FHE3/54 also has its own set of features and working principles. When current flows through the diodes in the forward direction, the electron-hole pairs in the semiconductor material generates electron drag. This induces a low forward voltage drop and a maximum forward current rating. However, when the current flows in the reverse direction, the depletion region would act as an insulator and prevent current flow. At this point, the diode achieves a high reverse breakdown voltage rating.

EGP20FHE3/54 is an ideal choice for higher-voltage applications, with its reliable protection circuits and efficient power handling properties. Its 0.05% tolerance is an attractive feature, and it offers the ability to be used with a variety of components. It is an affordable, reliable, and cost-effective solution for projects requiring a high current rating.

The specific data is subject to PDF, and the above content is for reference

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