EGP30D Allicdata Electronics
Allicdata Part #:

EGP30DTR-ND

Manufacturer Part#:

EGP30D

Price: $ 0.19
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE GEN PURP 200V 3A DO201AD
More Detail: Diode Standard 200V 3A Through Hole DO-201AD
DataSheet: EGP30D datasheetEGP30D Datasheet/PDF
Quantity: 1000
1250 +: $ 0.16790
2500 +: $ 0.15308
6250 +: $ 0.14321
12500 +: $ 0.13333
Stock 1000Can Ship Immediately
$ 0.19
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 95pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Base Part Number: EGP30D
Description

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The EGP30D rectifier diode is a high-power device designed for use in many electronic and electrical applications. It is composed of a single-junction PN-type semiconductor material and has a rated breakdown voltage of 30V. The device features a low forward voltage drop, low leakage current, and fast recovery time.

The EGP30D is typically used in the power rectification, power supply, and signal detection sections of electronic and electrical circuits. Its fast recovery time and low forward voltage drop allow the device to efficiently convert alternating current, AC, into direct current, DC. This rectification process allows electrical engineers to create circuits which operate using varying frequency components while maintaining a constant, reliable output. These circuits are commonly used in many modern electrical applications, such as powering LEDs, mobile phones, and other electronic devices.

The EGP30D\'s working principle is based on its PN-type material characteristics. When a forward voltage is applied across the diode, a junction is created between the P-type and N-type regions of the semiconductor material. Electrons are then allowed to flow through the junction and create a current. This current is then routed in the direction of the applied voltage.

Therefore, when an alternating current is applied over the PN junction of the EGP30D, every time the current passes through zero volts, the rectifier diode snaps off and blocks current from flowing in the opposite direction. This helps to maintain a constant, unidirectional current throughout the whole circuit, allowing for an efficient and reliable power conversion.

In addition to its role in power rectification and signal detection, the EGP30D can also be used to protect circuits from voltage spikes. Due to its fast recovery time, the EGP30D can be used to quickly block excessively high voltages and reduce the risk of potential damage to the circuit. This makes the EGP30D an ideal choice for many critical application fields.

In conclusion, the EGP30D rectifier diode is a versatile device with tremendous potential. Its low forward voltage drop and fast recovery time make it an ideal choice for many electronic and electrical applications, from power rectification and signal detection to voltage spike protection. By understanding its PN-type material characteristics and working principle, engineers can use the EGP30D to create robust and reliable power conversion circuits.

The specific data is subject to PDF, and the above content is for reference

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