| Allicdata Part #: | EGP31B-E3/C-ND |
| Manufacturer Part#: |
EGP31B-E3/C |
| Price: | $ 0.28 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE GEN PURP 100V 3A DO201AD |
| More Detail: | Diode Standard 100V 3A Through Hole DO-201AD |
| DataSheet: |  EGP31B-E3/C Datasheet/PDF |
| Quantity: | 1000 |
| 4200 +: | $ 0.25005 |
Specifications
| Series: | SUPERECTIFIER® |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 100V |
| Current - Average Rectified (Io): | 3A |
| Voltage - Forward (Vf) (Max) @ If: | 950mV @ 3A |
| Speed: | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr): | 50ns |
| Current - Reverse Leakage @ Vr: | 1µA @ 100V |
| Capacitance @ Vr, F: | 117pF @ 4V, 1MHz |
| Mounting Type: | Through Hole |
| Package / Case: | DO-201AD, Axial |
| Supplier Device Package: | DO-201AD |
| Operating Temperature - Junction: | -65°C ~ 175°C |
Description
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EGP31B-E3/C application field and working principleEGP31B-E3/C is a diode-based rectifier belonging to the category of single diodes rectifiers. This type of diode, also known as a low-power Schottky diode, has a number of applications, from replacements for Zener diodes to power supplies.EGP31B-E3/C is made of silicon and uses low power relative to other diodes. The device features a negative threshold voltage of -3.3V, which is the point at which the device starts to conduct electricity. Additionally, the device is reverse-biased and behaves as a closed switch when this negative threshold voltage is exceeded. This range of metal-semiconductor diodes, including EGP31B-E3/C, has a current-reverse blocking capability of 1A and a voltage withstanding capability of 30V.EGP31B-E3/C can be used to replace Zener diodes, especially in low-voltage amplification and rectification applications. One key feature of this diode is its low forward voltage drop, meaning that it is able to pass more current through for a given voltage compared to a standard rectifier diode. This diode is also used for reverse voltage protection, as it prevents excessive current flowing into a circuit used for control or monitoring.EGP31B-E3/C is also utilized in the regulation of DC power sources. The device is used to reduce the AC ripple in many power electronic components, such as switched-mode power supplies, to increase their efficiency. It is also well-suited for mixed-signal environment applications, such as in amplifiers, as well as low-noise switching and LED lighting circuits.In terms of fundamental structure, the EGP31B-E3/C is quite similar to other rectifier diodes. The device consists of a p-n junction between two types of semiconductor materials. When forward-biased, the device allows current to flow from one direction while in the reverse-biased state, the current is blocked. The EGP31B-E3/C’s reverse-blocking capability makes it suitable for reverse voltage protection and low-frequency circuits.In terms of installation and use, the EGP31B-E3/C is just like any other diode-based rectifier. Due to its low power consumption, the device can be installed in any suitable space, and as its operating voltage is below 30V, the device should be connected using wires or other appropriate protection. Additionally, the device is not suitable for high-frequency applications, so should be avoided in such circumstances.In summary, the EGP31B-E3/C is an ideal low-power Schottky diode for applications including replacing Zener diodes, regulating DC power sources, and use in low-noise, low-frequency circuits. The device is well-suited for these applications due to its low-power nature, reverse-blocking capability, and low forward voltage drop.The specific data is subject to PDF, and the above content is for reference
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| EGP30BHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 3A GP... |
| EGP31F-E3/D | Vishay Semic... | 0.28 $ | 1000 | DIODE GEN PURP 300V 3A DO... |
| EGP30C-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 3A GP... |
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| EGP31D-E3/D | Vishay Semic... | 0.28 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
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| EGP31B-E3/C | Vishay Semic... | 0.28 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
| EGP30DHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A GP... |
| EGP30B-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 3A GP... |
| EGP31A-E3/C | Vishay Semic... | 0.28 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
| EGP30BHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 3A GP... |
| EGP30G-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 3A GP... |
| EGP30A-E3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURPOSE DO204AL... |
| EGP30D-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
| EGP30C | ON Semicondu... | 0.18 $ | 1000 | DIODE GEN PURP 150V 3A DO... |
| EGP30G | ON Semicondu... | 0.19 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
| EGP31A-E3/D | Vishay Semic... | 0.28 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
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| EGP30A-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 50V 3A DO2... |
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| EGP30G-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 400V 3A GP... |
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