EGP31G-E3/C

Series:	SUPERECTIFIER®
Part Status:	Active
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	400V
Current - Average Rectified (Io):	3A
Voltage - Forward (Vf) (Max) @ If:	1.25V @ 3A
Speed:	Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr):	50ns
Current - Reverse Leakage @ Vr:	4µA @ 400V
Capacitance @ Vr, F:	48pF @ 4V, 1MHz
Mounting Type:	Through Hole
Package / Case:	DO-201AD, Axial
Supplier Device Package:	DO-201AD
Operating Temperature - Junction:	-65°C ~ 175°C

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EGP31G-E3/C is a single diode rectifier in General Purpose Family of devices manufactured by ON Semiconductor that feature low forward voltage drop, high current capabilities and high reliability. This rectifier is suitable for general-purpose rectification applications, specifically suited to protection of general electronics and military equipment.The device is composed of a single junction P-N type silicon diode enclosed in the familiar two-lead hermetically sealed ceramic body. It provides low power dissipation, fast switching speed, and improved thermal resistance. Available in a variety of packages from DO-214AA(SMA) to DO-213AB(DPAK), it can be used in commercial and industrial as well as military and spacecraft applications.The EGP31G-E3/C offers many advantages with its robust built and superior performance over other forms of diodes for rectification. It has low Vf, a maximum rated dissipation limitation of 350 mW and low thermal resistance offers a low junction temperature which makes this device suitable for a wide range of applications. It is also used for the protection of circuits against high voltage transients, overvoltage spikes and counter-EMI (Electromagnetic Interference) while providing superior thermal reliability making it suitable for applications that demand maximum reliability such as military, aerospace and industrial.The working principle of the EGP31G-E3/C device is based on a unique design of diffusion coefficients that enables the current to pass through a single P-N junction. This allows the application of alternating current to its terminals and the current is then rectified by the device in about two directions - the Diode’s Anode (+) and Cathode (-) sides. The EGP31G-E3/C features a low forward voltage drop resulting from the diffusion coefficient design, which is important for reducing power dissipation by limiting the voltage drop across the device.As with most other diodes, the EGP31G-E3/C can be used in various applications in both AC and DC applications, from low-level signals through high-level power switching, such as in power rectification, noise suppression, and radio frequency rectification. Other applications include voltage clamping, charge pump switching, and line tracking.The General Purpose Family of diode rectifiers from ON Semiconductor provides a cost-effective way to implement rectification and protection in a variety of applications. With their robust construction and reliable performance, the EGP31G-E3/C provides superior reliability suited to most general-purpose rectification applications.

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