EMA6DXV5T1G Allicdata Electronics

EMA6DXV5T1G Discrete Semiconductor Products

Allicdata Part #:

EMA6DXV5T1GOSTR-ND

Manufacturer Part#:

EMA6DXV5T1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS 2PNP PREBIAS 0.23W SOT553
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: EMA6DXV5T1G datasheetEMA6DXV5T1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Base Part Number: MA6
Supplier Device Package: SOT-553
Package / Case: SOT-553
Mounting Type: Surface Mount
Power - Max: 230mW
Frequency - Transition: --
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Series: --
Resistor - Emitter Base (R2): --
Resistor - Base (R1): 47 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 PNP - Pre-Biased (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The EMA6DXV5T1G is an advanced pre-biased array of five NPN transistors sharing a common collector in a miniature SLP-6 package. It is designed to give designers the freedom to select the right product for their application, enabling them to reduce design time, complexity and cost. The EMA6DXV5T1G delivers low-power dissipation and increased operating efficiency, supporting automated process flow and eliminating manual tuning.

The EMA6DXV5T1G has a range of versatile features, one of which is its pre-biased configuration. This allows designers to reduce the time and costs associated with setting, tuning and testing the pre-bias voltage while still having a device that is easy to work with. Its pre-biased approach also helps to reduce power consumption and system costs, resulting in an overall reduction in power consumption. In addition, the EMA6DXV5T1G has the potential to add additional functionality to your design such as low-side driver control, reduced power dissipation, and improved system performance.

The EMA6DXV5T1G features a built-in self-biasing feature which enables the individual elements in the package to be self-biased from a single terminal. This feature helps to reduce the circuit complexity and cost of the overall system design, as well as eliminating the need for manually setting, adjusting and tuning bias voltage. This provides increased flexibility for designers to explore new applications and increase overall system performance.

The EMA6DXV5T1G also includes other key features to streamline the design process. For example, it has an integrated base collector junction temperature sensor and temperature control module that helps control junction temperatures. This feature eliminates the need for manual tuning and helps reduce the system power consumption. Other features of the EMA6DXV5T1G include fluidic isolation, thermal overload protection and under-voltage shutdown.

The EMA6DXV5T1G is well suited for a range of applications that require pre-biased transistors, such as power amplifier biasing, lighting control, battery charging and conditioning, and motor control. Its built-in features and pre-biased configuration make it an ideal choice for designers looking to reduce design time, complexity and cost.

In summary, the EMA6DXV5T1G is a pre-biased array of five NPN transistors in a miniature SLP-6 package. Its pre-biased configuration and integrated features make it an ideal choice for a variety of applications that require pre-biased transistors. Furthermore, its built-in features help to reduce power consumptions and overall system cost, while its self-biasing feature eliminates the need for manual setting and tuning of bias voltage.

The specific data is subject to PDF, and the above content is for reference

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