EMA6DXV5T5G Allicdata Electronics
Allicdata Part #:

EMA6DXV5T5G-ND

Manufacturer Part#:

EMA6DXV5T5G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS 2PNP PREBIAS 0.23W SOT553
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: EMA6DXV5T5G datasheetEMA6DXV5T5G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Base Part Number: MA6
Supplier Device Package: SOT-553
Package / Case: SOT-553
Mounting Type: Surface Mount
Power - Max: 230mW
Frequency - Transition: --
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Series: --
Resistor - Emitter Base (R2): --
Resistor - Base (R1): 47 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 PNP - Pre-Biased (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The EMA6DXV5T5G is a part of the category of transistors known as bipolar junction transistors (BJTs) and is further classified as an "array, pre-biased" type. This type of transistor is effectively two transistors in one - a NPN and PNP transistor - that are already pre-biased in relative to each other, allowing for more efficient power usage.

The main application of this kind of transistor is in power amplification. In a typical application, the transistor\'s base is driven by an input voltage that is higher than the bias voltage, which causes current to flow through the base. This current is then passed to both the NPN and PNP transistors, causing them to switch on, which in turn drives a higher current across the emitter-collector terminals of both transistors. This current is then used to amplify the input voltage, allowing a higher voltage to be obtained without having to use ever increasing amounts of power.

The EMA6DXV5T5G transistor has some notable features which make it a good choice for power amplification applications. The pre-biased nature of the device means that it has a relatively low gate-emitter voltage (VGE) and a relatively low saturation voltage (VCEsat), which helps to reduce power consumption, as well as providing excellent noise immunity. Additionally, it has a high current gain (hfe) of 25 and a collector-emitter breakdown voltage of 9V, making it ideal for high-voltage power amplification.

This transistor can also be used in more general applications such as logic switching, current sensing and current limiting, and even protection circuits. For example, when used in a current-limiting circuit, the device can be used to reduce the voltage across a load in the event of an overcurrent condition.

In summary, the EMA6DXV5T5G transistor is a versatile, pre-biased BJT that can be used in a variety of power amplification and other applications. Its combination of low VGE and VCEsat, high hfe and collector-emitter breakdown voltage make it an ideal choice for high-voltage, power-amplification applications, as well as for general applications such as logic switching, current sensing and current limiting, and even protection circuits.

The specific data is subject to PDF, and the above content is for reference

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