
Allicdata Part #: | EMD30T2RTR-ND |
Manufacturer Part#: |
EMD30T2R |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS NPN/PNP PREBIAS 0.15W EMT6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | ![]() |
Quantity: | 1000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 5V / 140 @ 100mA, 2V |
Base Part Number: | *MD30 |
Supplier Device Package: | EMT6 |
Package / Case: | SOT-563, SOT-666 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 250MHz, 260MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA / 300mV @ 2.5mA, 50mA |
Series: | -- |
Resistor - Emitter Base (R2): | 10 kOhms |
Resistor - Base (R1): | 10 kOhms, 1 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V, 30V |
Current - Collector (Ic) (Max): | 100mA, 200mA |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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EMD30T2R is a three-transistor pre-biased complementary bipolar transistor array which is used for a variety of applications. This device is capable of supporting low-level analog signals and operating from the supply voltages of 5 V to 35 V. EMD30T2R is cost-effective, reliable and provides a full range of protection features, such as short circuit protection, over-temperature protection, reverse polarity protection and ESD protection.
EMD30T2R typically consists of three complementary NPN and PNP transistors in a single 13 pin DIP package. It features low on-state resistance, high power dissipation, and low noise. It is designed to provide high performance in order to maximize efficiency when driving digital logic circuits and analog signals. EMD30T2R is used in a variety of applications, including digital and analog circuits, motor control, battery charging and power converters.
The working principle of EMD30T2R is based on the complementary bipolar transistor structure. It consists of three NPN transistors (Q1, Q2, QC) connected in series with PNP transistors (QC2, Q2, Q1). This arrangement is commonly referred to as a three-transistor complementary transistor array because it is composed of two transistors of the same type connected together in series with one of the opposite type. The three transistors are pre-biased by a resistive divider network. This pre-biasing produces a controlled conduction stepping current in the transistors which makes it possible to further modulate the circuit operation.
EMD30T2R is used in a variety of applications, ranging from noise filtering in power converters to motor control in appliances, and various other low-level analog signal processing applications. It can be used to reduce the need for high slew rate transistors and it can also be used as an amplifier or amplifier buffer. It can be used to amplify analog inputs as well as providing protection for a power supply. Its high current drive capability makes it suitable for driving large loads such as relays, solenoids and AC motors. In addition, it is also suitable for protecting circuits from high temperature, reverse polarity and ESD damage.
The advantages of EMD30T2R include its low cost and its ability to support low-level analog signals over a wide range of supply voltages. The device also provides protection against high temperatures, reverse polarity and ESD damage. Furthermore, it has high current drive capability and low noise, which makes it suitable for various types of applications.
In conclusion, EMD30T2R is an ideal choice for a wide range of applications, including motor control, power converter noise filtering, and low-level analog signal processing. It is cost-effective, reliable and provides protection against high temperatures, reverse polarity and ESD damage. Its low on-state resistance and high power dissipation along with its high current drive capability make it suitable for driving a variety of loads such as relays, solenoids and AC motors.
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