EMD3T2R Discrete Semiconductor Products

EMD3T2R is the most popular pre-biased and dual NPN bipolar junction transistors (BJT) array in the industry. This device provides three 3-pin integrated pre-biased NPN bipolar transistors with two current-sensing regulators enabling it to pair with a pre-bias generator, like a VBE multiplier. This pre-biased array is designed to provide good high-frequency and power performance, with excellent linearity and superior thermal stability.

The primary application field of EMD3T2R is power switching, audio amplification, and high-speed, wideband signal control. This array has been designed to provide the best possible performance with minimal power consumption. It is suitable for circuits requiring a wide range of biasing and signal handling, large-signal capability, and low noise. In addition, this array is an ideal device for switching applications, where low on-resistance and high turn-off speed are desirable, as well as a low-level signal handling in audio applications.

The working principle of EMD3T2R is based on the dual-BJT structure. Each integrated array of two transistors is connected in parallel and have their collectors connected in series. When the array is pre-biased, the base currents of both transistors flow in the same direction, and the transistors act as a compound device causing a larger output current than the two individual transistors combined. The current-sensing regulators are used to ensure that the current output of the array is regulated, even when the input bias voltage is varied. A voltage generator, such as a VBE multiplier, is used to pre-bias the array by supplying a voltage between the base and emitter of both transistors.

The primary benefit of using a pre-biased array is that it makes it possible to maintain good linearity and thermal stability, even when the bias voltage is varied. Furthermore, the current-sensing regulator means that the output current of the array remains constant even when the input bias voltage is varied. This makes the EMD3T2R an ideal choice for applications where high performance and low power consumption are desired.

In short, EMD3T2R is a highly advanced pre-biased and dual NPN bipolar junction transistors (BJT) array. It provides three 3-pin integrated pre-biased NPN bipolar transistors with two current-sensing regulators enabling it to pair with a pre-bias generator, like a VBE multiplier. This array is designed to provide the best possible performance with minimal power consumption, with excellent linearity and superior thermal stability, making it ideal for power switching, audio amplification, and high-speed, wideband signal control.