EMD9FHAT2R Allicdata Electronics
Allicdata Part #:

EMD9FHAT2RTR-ND

Manufacturer Part#:

EMD9FHAT2R

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: PNP+NPN DIGITAL TRANSISTOR (CORR
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -...
DataSheet: EMD9FHAT2R datasheetEMD9FHAT2R Datasheet/PDF
Quantity: 8000
8000 +: $ 0.03572
Stock 8000Can Ship Immediately
$ 0.04
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): --
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): --
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6
Description

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EMD9FHAT2R is a closely spaced, pre-biased, 9-bipolar junction transistor array, each transistor contains three terminal connections for the four different connected devices. It is used for applications requiring a high level of stability and dependability in a very small package. This is achieved by the tight design characteristics of the device and its ability to provide robust switching performance in a wide range of environments. The device has been designed to be compatible with most types of substrate materials and is highly suitable for use in communications, automotive, industrial and medical applications.

The high level of security provided by the EMD9FHAT2R array enables it to be ideal for light control, magnetic control and switching applications. The device is also capable of supporting high speed pulse switching and is also suitable for high temperature applications. The close spacing of the bipolar junction transistors enable it to provide good thermal performance and robust thermal stability.

The pre-biased design of the EMD9FHAT2R array helps to prevent gate leakage and increases the effective lifetime of the device. It also provides better power dissipation and improved efficiency compared to the other types of transistors. The tight spacing of the devices ensures excellent reliability for long-term operation. The pre-biased design ensures that the potential of the gate terminals are constantly maintained, which helps to reduce the noise and interference.

The EMD9FHAT2R array can be used in various applications such as lighting control, motor control, switching control, power control and automotive applications. The device offers the advantage of low power consumption and improved reliability. The device is designed to provide a low level of noise and interference which is ideal for different types of communication systems. The pre-biased device also helps to ensure a low level of gate leakage, enabling better power dissipation and effective current flow.

In order to ensure the efficient working of the EMD9FHAT2R array, it is important to ensure that the transistor array is properly connected with the substrate. This is done by ensuring the proper spacing between the transistors, ensuring the proper connections between the transistors, and ensuring the proper voltage is applied to the substrate. Once connected, the device can then be used for the intended purpose. As with any electronic device, it is important to ensure that the device is kept in proper working conditions to ensure maximum performance.

The EMD9FHAT2R array is a reliable device which is highly suitable for various applications. It offers excellent performance, reliability and stability. With proper connection and maintenance, the device can provide reliable operation in all types of environments. This device is ideal for applications which require precision and high performance.

The specific data is subject to PDF, and the above content is for reference

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