EMD9T2R Discrete Semiconductor Products |
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| Allicdata Part #: | EMD9T2RTR-ND |
| Manufacturer Part#: |
EMD9T2R |
| Price: | $ 0.07 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | TRANS NPN/PNP PREBIAS 0.15W EMT6 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
| DataSheet: | EMD9T2R Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.07000 |
| 10 +: | $ 0.06790 |
| 100 +: | $ 0.06650 |
| 1000 +: | $ 0.06510 |
| 10000 +: | $ 0.06300 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 68 @ 5mA, 5V |
| Base Part Number: | *MD9 |
| Supplier Device Package: | EMT6 |
| Package / Case: | SOT-563, SOT-666 |
| Mounting Type: | Surface Mount |
| Power - Max: | 150mW |
| Frequency - Transition: | 250MHz |
| Current - Collector Cutoff (Max): | 500nA |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
| Series: | -- |
| Resistor - Emitter Base (R2): | 47 kOhms |
| Resistor - Base (R1): | 10 kOhms |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Current - Collector (Ic) (Max): | 100mA |
| Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The EMD9T2R is a pre-biased bipolar array transistor that offers particularly technique, such as the emitter-coupled logic, to be used in a wide range of applications. This type of transistor array is a combination of many transistors that are connected in a series. It is manufactured using the 10- leads Flexigrid, which is the new package developed by the EMD technology. Each of this leads, from 2 to 10, connect the many transistors that form the chip. The total number of transistors supported by the predetermined technology is around 24.
The EMD9T2R is primarily designed as an input/output device applications, such as interfacing, peripheral driver, and logic circuits. The general features of the device include a supply voltage range of 4.5V to 25.5V, a collector-emitter rated voltage at 130V, and a total power dissipation of 450 mW. The main advantage of this type of device is the possible very fast turn-on and turn-off times, thus enabling the use of the device in high speed digital circuits.
A typical application field of this array transistor is in data transmission circuits. The EMD technology allows for a robust and reliable transmission of data packets in a variety of communication applications. This type of transistor is also used for driving heavy loads in various types of motor control systems. The EMD9T2R is also used in analog- and- switched circuits, such as amplifiers and small signal switching applications. It can be used as an audio amplifier or a voltage level sensing and control device.
The working principle of the EMD9T2R is based on two basic assumptions. First, the device is a combination of many transistors that together form a single transistor array. This is the unique feature that separates this type of device from other types of transistor arrays. Second, the electrons are omnidirectional, and are allowed to freely flow in any direction around the array between the emitter, base and collector.
In order to understand how the EMD9T2R is able to operate in a circuit, it is important to understand the biasing of the array. Bias is the process by which the electrons are generated in the system. The EMD9T2R has 10 biasing points that are located at the 10-lead package. Each of these biasing points supplies a certain amount of electrons to the device. The total voltage of the 10 biasing points combined is the total bias voltage level of the device. This voltage level provides the correct number of electrons to the device, allowing it to operate in the specified circuit.
The actual working of the EMD9T2R is based on a combination of two effects. First, the electrons are allowed to flow freely between the two sides of the device, the emitter and the collector, due to the biasing. Second, the electrons that are generated from the electric field between the emitter and the collector form a current. This current is then amplified by the device by multiplying the current by the gain of the device, thus providing the desired power output.
In conclusion, the EMD9T2R is a pre-biased bipolar array transistor that allows for the use of the emitter-coupled logic (ECL) to be used in a variety of applications. It provides a wide operating voltage range and fast switching speeds, making it suitable for a number of different applications. The working principle of the device is based on the biasing of the device, in combination with the flow of electrons around the array between the emitter, base, and collector. This allows the device to provide the desired power output from the current. Additionally, this type of device can be used for audio amplifiers, voltage level control, motor control systems and for data transmission circuits.
The specific data is subject to PDF, and the above content is for reference
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EMD9T2R Datasheet/PDF