Allicdata Part #: | EMF5XV6T5-ND |
Manufacturer Part#: |
EMF5XV6T5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN PREBIAS/PNP 0.5W SOT56 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Bias... |
DataSheet: | EMF5XV6T5 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V / 270 @ 10mA, 2V |
Base Part Number: | EMF |
Supplier Device Package: | SOT-563 |
Package / Case: | SOT-563, SOT-666 |
Mounting Type: | Surface Mount |
Power - Max: | 500mW |
Frequency - Transition: | -- |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA / 250mV @ 10mA, 200mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 47 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V, 12V |
Current - Collector (Ic) (Max): | 100mA, 500mA |
Transistor Type: | 1 NPN Pre-Biased, 1 PNP |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Description
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: The EMF5XV6T5 is a pre-biased array of 4 bipolar junction transistors (BJTs) in a single package. It is designed to provide a single-cavity solution for multi-stage power-switching applications including driver stages, high-speed switching stages, half-bridge applications, and power-switching stages for high current switching. In this article, we will discuss the application fields of the EMF5XV6T5 and its working principle.
Application Fields
The EMF5XV6T5 is suitable for applications requiring high current-handling capability and fast switching such as motor and solenoid drivers, high-current half-bridge switches, and load-switching stages in multiple-stage power-switching applications. The EMF5XV6T5 is designed for high-reliability, high-speed switching and offers high power dissipation, low on-resistance, and low switching times.Advantages
The EMF5XV6T5 offers several advantages over other types of power switching arrays. First, it has excellent thermal resistance, which allows it to handle very high currents and power levels with excellent efficiency. Second, the package body is designed to fit in small footprints and to facilitate PC board assembly. Third, the use of pre-biased transistors reduces the complexity of the required layout. Fourth, the four high current channels are pre-matched to minimize thermal variations. Fifth, the package offers low EMI and offers improved environmental robustness compared to other packages. Finally, the device has excellent signal integrity and switching characteristics.Working Principle
The EMF5XV6T5 is built with four identical N-channel MOSFETs. Each transistor is pre-biased to reduce the amount of current required to drive the device. This simplifies the layout and reduces the switching times. The device also includes an output stage with a built-in avalanche protection feature to prevent overvoltage breakdown.The device is activated by the input voltage. When the input voltage exceeds the internal threshold, the MOSFETs are triggered, and the device is driven by the input voltage. When the output voltage exceeds the internal threshold, the device is activated, and the voltages are balanced. The internal multiplexer then selects the correct output voltage for the application.When the power supply is switched off, the internal pull-down resistors act to ensure the MOSFETs are turned off.Conclusion
The EMF5XV6T5 is a pre-biased array of four N-channel MOSFETs in a single package. It is designed to provide a single-cavity solution for multi-stage power-switching applications including driver stages, high-speed switching stages, half-bridge applications, and power-switching stages for high current switching. The device offers excellent thermal and electrical characteristics and features low EMI, low noise, and lower voltage and power consumption.The specific data is subject to PDF, and the above content is for reference
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