EMF5XV6T5 Allicdata Electronics
Allicdata Part #:

EMF5XV6T5-ND

Manufacturer Part#:

EMF5XV6T5

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN PREBIAS/PNP 0.5W SOT56
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Bias...
DataSheet: EMF5XV6T5 datasheetEMF5XV6T5 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 270 @ 10mA, 2V
Base Part Number: EMF
Supplier Device Package: SOT-563
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Power - Max: 500mW
Frequency - Transition: --
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 250mV @ 10mA, 200mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V, 12V
Current - Collector (Ic) (Max): 100mA, 500mA
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The EMF5XV6T5 is a pre-biased array of 4 bipolar junction transistors (BJTs) in a single package. It is designed to provide a single-cavity solution for multi-stage power-switching applications including driver stages, high-speed switching stages, half-bridge applications, and power-switching stages for high current switching. In this article, we will discuss the application fields of the EMF5XV6T5 and its working principle.

Application Fields

The EMF5XV6T5 is suitable for applications requiring high current-handling capability and fast switching such as motor and solenoid drivers, high-current half-bridge switches, and load-switching stages in multiple-stage power-switching applications. The EMF5XV6T5 is designed for high-reliability, high-speed switching and offers high power dissipation, low on-resistance, and low switching times.

Advantages

The EMF5XV6T5 offers several advantages over other types of power switching arrays. First, it has excellent thermal resistance, which allows it to handle very high currents and power levels with excellent efficiency. Second, the package body is designed to fit in small footprints and to facilitate PC board assembly. Third, the use of pre-biased transistors reduces the complexity of the required layout. Fourth, the four high current channels are pre-matched to minimize thermal variations. Fifth, the package offers low EMI and offers improved environmental robustness compared to other packages. Finally, the device has excellent signal integrity and switching characteristics.

Working Principle

The EMF5XV6T5 is built with four identical N-channel MOSFETs. Each transistor is pre-biased to reduce the amount of current required to drive the device. This simplifies the layout and reduces the switching times. The device also includes an output stage with a built-in avalanche protection feature to prevent overvoltage breakdown.The device is activated by the input voltage. When the input voltage exceeds the internal threshold, the MOSFETs are triggered, and the device is driven by the input voltage. When the output voltage exceeds the internal threshold, the device is activated, and the voltages are balanced. The internal multiplexer then selects the correct output voltage for the application.When the power supply is switched off, the internal pull-down resistors act to ensure the MOSFETs are turned off.

Conclusion

The EMF5XV6T5 is a pre-biased array of four N-channel MOSFETs in a single package. It is designed to provide a single-cavity solution for multi-stage power-switching applications including driver stages, high-speed switching stages, half-bridge applications, and power-switching stages for high current switching. The device offers excellent thermal and electrical characteristics and features low EMI, low noise, and lower voltage and power consumption.

The specific data is subject to PDF, and the above content is for reference

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