Allicdata Part #: | EMF5XV6T5GOSTR-ND |
Manufacturer Part#: |
EMF5XV6T5G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN PREBIAS/PNP SOT563 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Bias... |
DataSheet: | EMF5XV6T5G Datasheet/PDF |
Quantity: | 1000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V / 270 @ 10mA, 2V |
Base Part Number: | EMF |
Supplier Device Package: | SOT-563 |
Package / Case: | SOT-563, SOT-666 |
Mounting Type: | Surface Mount |
Power - Max: | 500mW |
Frequency - Transition: | -- |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA / 250mV @ 10mA, 200mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 47 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V, 12V |
Current - Collector (Ic) (Max): | 100mA, 500mA |
Transistor Type: | 1 NPN Pre-Biased, 1 PNP |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The EMF5XV6T5G is a pre-biased applicable transistors array with bipolar junction transistor (BJT) technology. It offers advantages such as enhanced performance and improved reliability in comparison to other regular transistors. This device is typically used to reduce circuit complexity and minimize the number of parts used in a circuit.
The EMF5XV6T5G is designed to provide performance optimization, the most amount of integrated circuits in the smallest space possible. In order to achieve this, a certain portion of the circuit’s transistors are biased to a predetermined voltage level. This predetermined bias voltage significantly reduces circuit complexity, minimizing the number of parts used in the circuit.
The EMF5XV6T5G is designed to meet some of the highest industry standards for safety, reliability, and performance. The device features an ESD rating of 8 kV and is able to withstand temperatures up to +105 °C. It also features a rated current up to 3A, and can be operated with voltage up to 27 V.
In addition to its pre-biased transistors array capabilities, the EMF5XV6T5G features built-in protection circuits. These protection circuits help protect the device from overvoltages, overcurrents, and electro-static discharges. The EMF5XV6T5G also features extended common base voltage range and a latch-up protection circuit.
The EMF5XV6T5G provides the highest level of performance and reliability for circuit designers. The device operates using the bipolar junction transistor (BJT) technology and offers a high common base voltage range of up to 20 V. The device is designed for minimum noise performance and provides an excellent response time for applications such as control and switching functions.
The EMF5XV6T5G has a wide range of application fields, including automotive, consumer electronics, telecom, and industrial. It can be used in the field of motor control, analog circuits, displays, and even in the industry of renewable energy. The device’s modular design allows it to be used in various types of applications, providing flexibility and increased reliability.
In conclusion, the EMF5XV6T5G offers a number of advantages for circuit designers. It offers a wide range of application fields, built-in protection circuits to safeguard the device, and a high common base voltage range. The device is designed to provide enhanced performance, improved reliability, and reduced circuit complexity. With its modular design, the EMF5XV6T5G is an ideal choice for applications such as motor control, analog circuits, displays, and renewable energy.
The specific data is subject to PDF, and the above content is for reference
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