EMH60T2R Discrete Semiconductor Products |
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Allicdata Part #: | EMH60T2RTR-ND |
Manufacturer Part#: |
EMH60T2R |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS 2NPN PREBIAS 0.15W EMT6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | EMH60T2R Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 250MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | EMT6 |
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The EMH60T2R is a family of pre-biased transistor arrays designed to provide the necessary elements for driving the gates of MOSFETs and IGBTs in power applications. The devices are general-purpose NPN circuits with inbuilt base resistors and are designed for use in a wide range of gate driving applications. Capable of driving up to 8 MOSFET and IGBTs, the EMH60T2R is well suited for applications that require precision low-side gate drive control and power handling around a range of temperature conditions.
The EMH60T2R includes a monolithic array of 7 NPN transistors and a minimum of 15 external components. Each device comprises 2 upper NPN transistors, an integrated base resistor, 4 lower NPN transistors, an output power stage and an ESD protection diode. The upper 2 transistors, which are used for PWM control and switching, are permanently enabled. The 4 lower transistors, which are used for low-side control and logic level shifting, are active in the enabled state. Each of the 7 transistors have an associated base resistor that can be used to control the current, turn-on and turn-off times. The base resistor values can be individually programmed to adjust the gate drive characteristics.
The EMH60T2R has several advantages over other types of gate drivers. It is designed to offer improved thermal stability and a wide operating temperature range of -40°C to 150°C. Other features include improved start-up and shut-down times, better noise immunity and an integrated ESD protection diode. The EMH60T2R also includes circuitry for protection against over-voltage and under-voltage conditions.
The EMH60T2R is designed to be simple to use and set-up. There are setup menus available on the device that enable users to adjust the temperature settings, enable ESD protection and enable the 12V shutdown input. The device can also be connected to a microcontroller or other external circuitry to configure the device and set the voltage levels and timing parameters. Additionally, the device can be connected to a 3.3V or 5V external logic supply rail.
The EMH60T2R has a wide range of applications and is particularly useful in gate drive and power switching applications. It is also suitable for use in motor control applications and as an alternative to discrete mosfets. Battery charging, power management, audio amplifiers and industrial automation are further examples of application areas where the EMH60T2R can provide a reliable and robust solution.
In conclusion, the EMH60T2R is a reliable, high-performance transistor array with built-in base resistors. It is well suited for a wide range of gate driving applications and offers improved thermal stability, start-up and shut-down times, better noise immunity and an integrated ESD protection diode. Additionally, it is easy to use and set-up and is suitable for a variety of applications including motor control, battery charging and audio amplifiers.
The specific data is subject to PDF, and the above content is for reference
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