EMH6T2R Discrete Semiconductor Products

DC Current Gain (hFE) (Min) @ Ic, Vce:	68 @ 5mA, 5V
Base Part Number:	*MH6
Supplier Device Package:	EMT6
Package / Case:	SOT-563, SOT-666
Mounting Type:	Surface Mount
Power - Max:	150mW
Frequency - Transition:	250MHz
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500µA, 10mA
Series:	--
Resistor - Emitter Base (R2):	47 kOhms
Resistor - Base (R1):	47 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	2 NPN - Pre-Biased (Dual)
Part Status:	Not For New Designs
Packaging:	Tape & Reel (TR)

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EMH6T2R Integrated Pre-Biased Transistor Arrays Application Field and Working PrincipleThe EMH6T2R Integrated Pre-Biased Transistor Arrays manufactured by Elektor are 4-channel pre-biased FET arrays offering a combination of robust H-bridge operation and low signal noise. This integrated, high-performance device provides an ideal solution for automotive and industrial applications. It features a wide operating voltage range from 3.3V to 36V, low quiescent current and current limiting protection. The device also offers a wide slew rate range, allowing for greater flexibility and precise motor control.The EMH6T2R is a bipolar junction transistor (BJT) array that is composed of three transistors inside a single package. These transistors are connected together in a simple H-bridge configuration and are pre-biased to reduce switching time and supply current. The array has an optimized base-emitter voltage (Vbe) of 0.7V, which allows for fast switching and increases the device\'s efficiency and reliability. The EMH6T2R also features a wide operating voltage range and high current capacity, making it suitable for use in a variety of motor control applications.The EMH6T2R is a versatile device that can be used in a variety of applications, including motor and mechanical control, lighting control, HVAC systems, and automotive applications. The device is able to provide precise motor control when used in conjunction with a PWM signal. The device also features a low minimum on/off time, allowing for quick response and accurate motor operation. The EMH6T2R has a low quiescent current and current limiting protection, making it ideal for use in safety critical applications. The device also features a wide operating temperature range of -40°C to +125°C, making it suitable for use in a variety of environments.In terms of working principle, the EMH6T2R operates as follows: when the base-emitter voltage (Vbe) of the transistor reaches the base breakdown voltage of 0.7V, the transistor will switch on and current will flow through the transistor. The current will continue to flow through the transistor until the collector-emitter voltage (Vce) reaches its saturation voltage. At this point, the transistor will switch off and the current in the circuit will be cut off.The EMH6T2R integrated pre-biased H-bridge can be used in a variety of applications due to its wide voltage range and high current capacity. The device features a low quiescent current and current limiting protection to protect the device from damage, making it suitable for use in safety critical applications. The device also has a wide operating temperature range, making it ideal for use in a variety of environments. The EMH6T2R is an efficient and versatile device that can be used in motor control, lighting control, HVAC systems, and automotive applications.

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