EMZ1DXV6T1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN, PNP
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	120 @ 1mA, 6V
Power - Max:	500mW
Frequency - Transition:	180MHz, 140MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-563, SOT-666
Supplier Device Package:	SOT-563
Base Part Number:	EMZ1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

EMZ1DXV6T1 Arrays is a type of bipolar junction transistor (BJT) that is designed to increase the application flexibility of BJTs making them useful in applications where single transistors have been traditionally used. This type of transistor array provides greater application flexibility than single transistors by increasing the number of individual elements that can be connected together. As a result, they are suitable for applications such as power control, signal processing, and stable amplification. The EMZ1DXV6T1 Array is composed of multiple separable and unidirectional NPN transistors that can be used together to provide amplification or switching signals. Each of these transistors have been optimized for low-power operation, low-noise characteristics, good linearity, wideband response, and good temperature stability. This ensures that the EMZ1DXV6T1 array can provide a wide dynamic range with a minimum of power dissipation.The new EMZ1DXV6T1 Arrays takes advantage of a double maximum-maximum silicon substrate technology used in amplifiers to achieve a higher current gain, higher transconductance, lower thermal resistance and higher power dissipation capability. In addition to the improvement in performance, this double max-max technology allows the EMZ1DXV6T1 arrays to be incorporated into a wider array of applications.The EMZ1DXV6T1 array typically has very low parasitic capacitances and high breakdown voltages compared to standard transistors. This maximizes the utility of the array and helps avoid excessive power losses. Furthermore, the new EMZ1DXV6T1 Arrays has optimized layout to reduce the stray capacitance between the I/O pins, resulting in low noise and high linearity performance.The EMZ1DXV6T1 Array is a versatile device suitable for many applications, such as power supply designs, communications systems, high-speed analog circuits, switching power supplies, and motor control. One application of the EMZ1DXV6T1 Arrays is in amplifier designs, where the power output can be increased without compromising the overall stability. This is because the EMZ1DXV6T1 arrays can increase the transconductance while still maintaining a low thermal resistance. The low noise characteristics of the device also means it can be used in high-precision applications such as medical systems and military equipment.The working principle of the EMZ1DXV6T1 Array is based on the use of bipolar transistors. Each transistor has a collector connection, one or more base connections and an emitter connection. When current is applied to the base connections, a voltage is created between the collector and the emitter, creating a path for current to flow between the two. The base connections also act as a control, allowing the user to regulate the current flow.Overall, the EMZ1DXV6T1 Array is a new type of bipolar metal oxide semiconductor field effect transistor that can provide increased application flexibility compared to single transistors. The low-power, low-noise characteristics, good linearity, wideband response, and good temperature stability give this transistor array a wide dynamic range of applications, from high-efficiency amplifier designs to motor control. The EMZ1DXV6T1 Array is a great example of how transistors can be used to increase the performance of many applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description