Allicdata Part #: | EMZ1DXV6T5-ND |
Manufacturer Part#: |
EMZ1DXV6T5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN/PNP 60V 0.1A SOT563 |
More Detail: | Bipolar (BJT) Transistor Array NPN, PNP 60V 100mA ... |
DataSheet: | EMZ1DXV6T5 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN, PNP |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 6V |
Power - Max: | 500mW |
Frequency - Transition: | 180MHz, 140MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SOT-563 |
Base Part Number: | EMZ1 |
Description
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EMZ1DXV6T5 is a transistors – bipolar (BJT) – array. It is a product of Infineon Technologies AG, which is a multi-national semiconductor company headquartered in Munich, Germany. This technology is used in a variety of applications and is typically characterized as a high-voltage transistor array used for power management. The EMZ1DXV6T5 is composed of eight NPN wide-gap Transistors that are able to operate up to sixty volts.
The EMZ1DXV6T5 has the ability to handle high power and high voltage, making it an attractive option for applications that require both properties. This device is most typically used in computer software, home audio systems, and other consumer electronics – as these generally require high frequency and large power flows. In addition, the device’s low power losses and reliability make it an ideal choice for automotive applications – particularly given the high power output typically required in such settings.
The working principle of any bipolar transistor array is the same, regardless of the specific model. In particular, the EMZ1DXV6T5\'s circuit requires two PNP transistors and two NPN transistors. The PNP transistors are used to form a simple current amplifier, while the two NPN transistors are the actual power transistors. When a larger voltage is applied to the input, the current at the output is amplified by the current amplifiers. This is because the NPN transistors will draw more current through the transistors, thus increasing the output current.
The EMZ1DXV6T5’s output current capabilities are expressed as a ratio of the input voltage to the output current – known as the gain ratio. The gain ratio determines the amount of output current that the device can handle. This is important as it allows users to select the appropriate amount of power needed for the desired application. Additionally, the EMZ1DXV6T5 utilizes an internal resistor for thermal protection – in order to regulate the array to optimal operation temperatures and further reduce power losses.
In conclusion, the EMZ1DXV6T5 is an efficient and reliable NPN array transistor used for a variety of commercial and industrial applications. These include computer software and hardware, home audio, and automotive applications. Furthermore, the EMZ1DXV6T5 can handle high power and voltage, making it an attractive option for applications requiring both properties. The device is characterized by its internal protection components, a gain ratio and an internal resistor for thermal protection. The EMZ1DXV6T5 provides a cost-effective solution for a broad range of applications, while also offering excellent performance.
The specific data is subject to PDF, and the above content is for reference
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