EMZ1DXV6T1G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN, PNP
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	120 @ 1mA, 6V
Power - Max:	500mW
Frequency - Transition:	180MHz, 140MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-563, SOT-666
Supplier Device Package:	SOT-563
Base Part Number:	EMZ1

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Bipolar Junction Transistor (BJT) Arrays - EMZ1DXV6T1G Application Field and Working Principle

Bipolar junction transistor (BJT) arrays have become an important component in applications that require high speed, high power, and high frequency output. The EMZ1DXV6T1G BJT array is designed for use in applications such as high- frequency switching, audio amplifier, and line drivers. This article will explore the application field and working principle of the EMZ1DXV6T1G BJT array.

Application Field

The EMZ1DXV6T1G BJT array is particularly well-suited for applications that require high operating temperatures and large current switching. It is also suitable for use in high-speed and high-power applications in the automotive, consumer, and industrial industries. For example, the BJT array can be used for load switch applications, such as automotive fuel injection control and electric power steering, as well as for high-voltage motor-control drives and power management. The EMZ1DXV6T1G BJT array is designed with low quiescent current, low on-state resistance, and high-frequency switching characteristics to allow for rapid performance and greater efficiency. This makes it an excellent choice for applications that require high switching speeds, such as wireless power transfer, wireless charging coils, and more. It is also ideal for use in high-frequency switching, line drivers, and audio amplifiers. The EMZ1DXV6T1G BJT array is designed with low on-state resistance and a low maximum drain-source voltage, making it suitable for high-voltage applications. Additionally, it has a low noise level, high current-handling capabilities, and a wide operating temperature range, making it suitable for applications that require reliable and accurate operation.

Working Principle

The EMZ1DXV6T1G BJT array is a three-terminal semiconductor device consisting of six bipolar transistors (BJTs) in a single package. Each transistor consists of three layers of doped semiconductor materials, in which one layer is slightly more doped than the other two. The transistors are connected in a way that allows for current to flow both between the base and collector, as well as from the base to the emitter. Each transistor in the array can be operated in either a forward-biased or reverse-biased configuration. In the forward-biased configuration, a voltage applied between the base and collector terminals will cause current to flow from the collector to the base and then to the emitter. In the reverse-biased configuration, a voltage applied between the base and emitter will prevent current from flowing. The EMZ1DXV6T1G BJT array is usually operated as an array of switching elements, with each transistor operating independently to switch on and off as required. This can be used to drive large loads, such as motors and loudspeakers, as well as to run audio amplifiers and line drivers.

Conclusion

The EMZ1DXV6T1G BJT array is a versatile and reliable component capable of operating in a variety of applications at extreme conditions. It is well-suited for applications that require high speed, high power, and high frequency output, such as wireless power transfer, wireless charging coils, automotive fuel injection control, electric power steering, and more. Additionally, its low quiescent current and low on-state resistance allow for rapid performance and greater efficiency.

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