ES 1F Allicdata Electronics
Allicdata Part #:

ES1F-ND

Manufacturer Part#:

ES 1F

Price: $ 0.15
Product Category:

Discrete Semiconductor Products

Manufacturer: Sanken
Short Description: DIODE GEN PURP 1.5KV 500MA AXIAL
More Detail: Diode Standard 1500V 500mA Through Hole
DataSheet: ES 1F datasheetES 1F Datasheet/PDF
Quantity: 1000
7000 +: $ 0.13396
Stock 1000Can Ship Immediately
$ 0.15
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1500V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 2V @ 500mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 10µA @ 1500V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: --
Operating Temperature - Junction: -40°C ~ 150°C
Description

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(ES1F application field and working principle)

The ES1F is a single rectifier diode, suitable for a wide rangeof applications. It is especially designed for use in switching power supplies, which require significant surge currents, due to its low forward voltage drop and decent blocking ability. Moreover, it has a fast reverse recovery time and high junction temperature, which make it particularly suitable for applications where a large number of cycles are necessary.

The ES1F is a miniature diode with high power ratings, suitable for use in the most demanding switching power supply applications. It has a low on-state voltage drop, making it an ideal component for power regulation in a variety of applications including DC/DC converters, high frequency AC/DC converters and general AC/DC applications. It also has a relatively fast response time, allowing for fast switching and improved system efficiency.

The ES1F has a 35V breakdown voltage, a 62A current rating, and a 45ns reverse recovery time. It also has a thermal resistance junction-case rating of 6°C/W, allowing it to handle temperatures up to 150°C while still having the ability to dissipate 4020mW of power. Its construction features a glass-passivated junction coupled with a ceramic body, which ensures consistent and stable performance in the most demanding environments.

The working principle of an ES1F is quite simple. When no current is flowing through the diode, it is in a “reverse bias” state, which means that the majority of the current “flows away” from the diode, rather than through it. This is what prevents current from flowing “forward” through the diode. However, when a forward bias is applied (e.g. when a voltage greater than the breakdown voltage of the diode is applied to the diode), the diode will start to conduct current, allowing current to flow through it. By controlling the applied bias, the amount of current flow can be regulated and used to control the voltage/current output of a power supply.

The ES1F is suitable for a wide variety of applications, including DC/DC converters, switching power supplies, DC amplifiers, voltage controllers and many other power-switching and control applications. Its low on-state voltage drop, fast response time and high temperature ratings make it an ideal choice for power-switching and control applications that require significant surge currents for operation.

The specific data is subject to PDF, and the above content is for reference

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