
Allicdata Part #: | ES1FLMHG-ND |
Manufacturer Part#: |
ES1FL MHG |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 300V 1A SUB SMA |
More Detail: | Diode Standard 300V 1A Surface Mount Sub SMA |
DataSheet: | ![]() |
Quantity: | 1000 |
10000 +: | $ 0.04498 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 300V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 5µA @ 300V |
Capacitance @ Vr, F: | 8pF @ 1V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
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ES1FL MHG Application and Working Principle
ES1FL MHG refers to a semiconductor device, specifically a type of rectifier diode, which is used to convert alternating current (AC) into direct current (DC). It has a wide variety of applications and can be found in a number of electrical and electronic devices and circuits.
Features of ES1FL MHG
The ES1FL MHG is capable of performing with high efficiency and low noise. It has a low operating temperature and a very fast switching time. It also offers excellent electrical and thermal characteristics and is highly reliable.
Operating Principle
The device consists of two main semiconductor layers. A layer of N-type semiconductor material is sandwiched between two layers of P-type material. When a positive voltage is applied to the positive terminal, electrons are attracted to the P-type layer and holes are attracted to the N-type layer. As a result, a flow of electrons is created in one direction and a current is created in the opposite direction.
When the voltage is removed, the electrons and holes combine and then quickly recombine in the same way they were attracted to the semiconductor layers. This process is called \'recombination\' and it is what creates the positive and negative currents.
Applications
The ES1FL MHG is used in a wide range of applications, including AC and DC power supplies, motor drives, frequency converters, and pulse-width-modulated circuits. It is also used in rectification and demodulation of signals.
In AC-DC power supplies, the device is used to convert the AC power supply into DC power. This is achieved by using the diode in its forward-biased mode. In frequency converters, the device is used to convert the alternating current into a unidirectional current. In motor drives, the device is used to efficiently drive the motor.
In pulse-width-modulated circuits, the device is used to create a pulse-width-modulated output. This is done by rapidly changing the current flow through the device. The width of the pulses is then adjusted to control the speed and direction of the motor.
Advantages
The ES1FL MHG provides a number of advantages, including a low operating temperature, a low leakage current, and fast switching times. It also offers excellent electrical and thermal characteristics and is highly reliable.
The device is also widely available and relatively inexpensive. In addition, the device is relatively easy to use and is widely used in a wide range of applications.
Conclusion
The ES1FL MHG is a reliable and efficient device which can be used in a variety of applications. It is capable of providing high efficiency, low noise and fast switching times. It is also a relatively inexpensive and widely available device.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
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ES1FHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
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ES1FL RUG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FLHRUG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FLHM2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
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ES1FL MHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FLHRVG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1F M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
ES1F | ON Semicondu... | -- | 82500 | DIODE GEN PURP 300V 1A SM... |
ES1FLHRHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FL RFG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FL M2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FL MTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FL RVG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FLHRQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FL RQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
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