
Allicdata Part #: | ES1DHE3_A/HGITR-ND |
Manufacturer Part#: |
ES1DHE3_A/H |
Price: | $ 1.95 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 200V 1A DO214AC |
More Detail: | Diode Standard 200V 1A Surface Mount DO-214AC (SMA... |
DataSheet: | ![]() |
Quantity: | 7200 |
1 +: | $ 1.95000 |
10 +: | $ 1.89150 |
100 +: | $ 1.85250 |
1000 +: | $ 1.81350 |
10000 +: | $ 1.75500 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 920mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 25ns |
Current - Reverse Leakage @ Vr: | 5µA @ 200V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | ES1D |
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Diodes - Rectifiers - Single
ES1DHE3_A/H Application Field and Working Principle
ES1DHE3_A/H is a single rectifier diode designed for a variety of high-power applications. This device is a special Schottky barrier diode, also known as a "hot-carrier diode" or Schottky diode. The Schottky diode enjoys a low voltage drop when compared to existing diode technology, making it an ideal choice for applications that must minimize losses.
ES1DHE3_A/H is a "fast-recovery" diode, which means that it can switch quickly, with minimum switching losses. This makes it suitable for high frequency applications, such as switching power supplies, frequency converters and switched-mode power supplies. It is also highly suitable for rectification purposes, particularly when very high peak or reverse surge currents are required. The device offers very good reverse recovery characteristics, giving it good performance in this area.
ES1DHE3_A/H is available in a variety of packages, with either a through-hole or a surface-mount version. Its operating temperature range is from -55°C to +125°C, making it suitable for most commercial and industrial applications.
Working Principle
The diode is a two-terminal device that carries current only in one direction. When forward biased with a voltage above a certain threshold value, known as the cut-in voltage or forward turn-on voltage, a conducting path is created between the anode and cathode. This conducting path is known as the depletion region and it is this region that allows current to flow.
When the forward bias is reversed, the depletion region increases in size and current flow is rapidly reduced, due to the reverse junction capacitance. This capacitance is extremely important, as it is this capacitance that allows the device to switch quickly. Reverse current begins to flow, and as the reverse voltage reaches a certain level, a certain percentage of the reverse current no longer flows across the junction but is diverted inwards and stored.
This stored current must be discharged in order to turn the device back on again, and the rate at which this charge is discharged is known as the rate of recovery or reverse recovery time. The faster the rate of recovery, the more efficient the diode is. The ES1DHE3_A/H diode offers excellent reverse recovery times, making it highly efficient and suitable for high frequency applications.
Conclusion
ES1DHE3_A/H is a single rectifier diode with excellent performance characteristics, making it suitable for a range of high-power applications. Its low voltage drop and fast recovery time make it suitable for a variety of high frequency applications, such as switched-mode power supplies, rectification and frequency converters. It is available in a variety of packages and its operating temperature range is from -55°C to +125°C, making it suitable for most commercial and industrial applications.
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Part Number | Manufacturer | Price | Quantity | Description |
---|
ES1DVHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
ES1D-E3/5AT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
ES1D-M3/5AT | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
ES1DHE3_A/I | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
ES1DHE3_A/H | Vishay Semic... | -- | 7200 | DIODE GEN PURP 200V 1A DO... |
ES1DE-TP | Micro Commer... | 0.06 $ | 6000 | DIODE GEN PURP 200V 1A DO... |
ES1DTR | SMC Diode So... | 0.04 $ | 1000 | DIODE GEN PURP 200V 1A SM... |
ES1DLHMHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1DHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
ES1DL MQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1DLHRUG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1DLHRTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1DLHRVG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1D-LTP | Micro Commer... | -- | 15000 | DIODE GEN PURP 200V 1A DO... |
ES1DL RQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1DLHRFG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1DV M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
ES1DRX | Nexperia USA... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A SO... |
ES1D-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A SM... |
ES1DL MHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1D | ON Semicondu... | -- | 6598 | DIODE GEN PURP 200V 1A SM... |
ES1DL RFG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1D/1 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
ES1DL R3G | Taiwan Semic... | 0.07 $ | 1800 | DIODE GEN PURP 200V 1A SU... |
ES1DHE3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
ES1DL RVG | Taiwan Semic... | -- | 3000 | DIODE GEN PURP 200V 1A SU... |
ES1D-M3/61T | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
ES1D-13-F | Diodes Incor... | -- | 230000 | DIODE GEN PURP 200V 1A SM... |
ES1DL MTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1DLHMQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1D-TP | Micro Commer... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
ES1DLHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1D R3G | Taiwan Semic... | 0.06 $ | 7200 | DIODE GEN PURP 200V 1A DO... |
ES1DLHRQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1DV R3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
ES1DL RTG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
ES1DAF | ON Semicondu... | 0.08 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
ES1DLW RVG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A SO... |
ES1DHE3/5AT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
ES1DLHRHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A SU... |
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