ES1G-TP Allicdata Electronics
Allicdata Part #:

ES1G-TPTR-ND

Manufacturer Part#:

ES1G-TP

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: DIODE GEN PURP 400V 1A DO214AC
More Detail: Diode Standard 400V 1A Surface Mount DO-214AC (HSM...
DataSheet: ES1G-TP datasheetES1G-TP Datasheet/PDF
Quantity: 1000
3000 +: $ 0.05358
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Last Time Buy
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (HSMA)
Operating Temperature - Junction: -50°C ~ 150°C
Base Part Number: ES1G
Description

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ES1G-TP Application Field and Working Principle

ES1G-TP is an electronic component that belongs to the category of diodes-rectifiers-single. It is used in various electrical and electronic fields to serve different purposes, such as storing energy, converting alternating current (AC) to direct current (DC), or filtering signals. In the following part, application fields and the basic working principle of ES1G-TP are introduced.

Application Fields

ES1G-TP is mainly used in electrical and electronic circuits, providing various functions. One of its most common uses is in the rectification of alternating current (AC), a process of changing AC to direct current (DC). After converting AC to DC, a constant voltage is outputted, which is stabler and more controllable comparing to AC. It is the reason why rectification needs to be done in many electrical and electronic circuits, such as battery charging systems. Another application of ES1G-TP is for signal filtering. Signals of AC may contain noises, so electrically filtering them is necessary for obtaining clean DC signals. In addition, ES1G-TP can also be used in tasks like powering sensors and relays, as well as storing energy.

Working Principle

Atomic structure is the basis for ES1G-TP\'s basic working principle. ES1G-TP is a two-terminal semiconductor diode consisting of two regions - an N-type region and a P-type region. The depletion region is created between the two regions by depletion of electrons and holes, and have reverse biased as biased voltage is added. When the diode is forward biased, the electrons and holes are pushed together, making the depletion region much thinner. This reduces the resistance of the N-type region, allowing current to flow through.

When the voltage across the diode reaches the Typical Peak Reverse Voltage (VFK), the diode is reverse-biased. Under this conditions, electrons and holes in the N-type and P-type regions are more likely to flow to the depletion region, making the depletion region thicker. This raises the resistance of N-type region and blocks current from flowing, acting as a shutoff switch.

The specific data is subject to PDF, and the above content is for reference

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