ES1GLHRHG Allicdata Electronics
Allicdata Part #:

ES1GLHRHG-ND

Manufacturer Part#:

ES1GLHRHG

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 400V 1A SUB SMA
More Detail: Diode Standard 400V 1A Surface Mount Sub SMA
DataSheet: ES1GLHRHG datasheetES1GLHRHG Datasheet/PDF
Quantity: 1000
10000 +: $ 0.04799
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Description

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ES1GLHRHG is a single rectifier diode designed for applications that require high surge current capability. It is a semiconductor device that is made from two layers of alternate N-Type and P-Type materials sandwiched together with an oxide layer between them. It is used for rectifying alternating current (AC) to direct current (DC). The device is extremely efficient and is often used in power applications due to its ability to quickly switch between on and off states.

Features

  • High surge capacity
  • Low forward voltage drop
  • Excellent temperature performance
  • High forward current handling capacity
  • Low reverse current leakage

Applications

ES1GLHRHG is an ideal choice for a wide range of application requirements due to its ability to handle higher power loads and higher surge capabilities in a smaller package. This makes it an excellent option for applications such as home appliances, automotive electronics, power supplies, solar power systems, and more. It is also widely used in both military and aerospace applications.

Working Principle

The ES1GLHRHG device is made up of two layers of opposite conductivity type semiconductor materials. The junction between these two layers is also known as a PN junction. When an alternating current is applied to the device, the current flows through the PN junction and the voltage is rectified. This then allows the current to flow in one direction only and the device becomes a rectifier. When the current is removed, the device will switch back to its off state.

Conclusion

The ES1GLHRHG is an excellent choice for any application that requires excellent surge protection and protection from voltage spikes. Its low forward voltage drop and high current rating make it ideal for power applications and its small size make it a great choice for automotive and aerospace applications. With its high surge current capability, this device is sure to meet almost any need.

The specific data is subject to PDF, and the above content is for reference

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